IEEE Electron Device Letters最新文献_第8页

Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers 实现在 300 毫米晶圆上制造垂直 SOT-MTJ 的高产量

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454609

Wenlong Yang;Zhenghui Ji;Yang Gao;Kaiyuan Zhou;Qijun Guo;Dinggui Zeng;Shasha Wang;Ming Wang;Lijie Shen;Guilin Chen;Yihui Sun;Enlong Liu;Shikun He

{"title":"Achieving High Yield of Perpendicular SOT-MTJ Manufactured on 300 mm Wafers","authors":"Wenlong Yang;Zhenghui Ji;Yang Gao;Kaiyuan Zhou;Qijun Guo;Dinggui Zeng;Shasha Wang;Ming Wang;Lijie Shen;Guilin Chen;Yihui Sun;Enlong Liu;Shikun He","doi":"10.1109/LED.2024.3454609","DOIUrl":"10.1109/LED.2024.3454609","url":null,"abstract":"The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the next generation of MRAM technology. To achieve high yield and consistent device performance in MTJs with perpendicular magnetic anisotropy, an integration flow has been developed that incorporates special MTJ etching technique and other CMOS-compatible processes on a 300 mm wafer manufacturing platform. Systematic studies have been conducted on device performance and statistical uniformity, encompassing magnetic properties, electrical switching behavior, and reliability. Achievements include a switching current of \u0000<inline-formula> <tex-math>$680~mu $ </tex-math></inline-formula>\u0000A at 2 ns, a TMR as high as 119%, ultra-high endurance (over \u0000<inline-formula> <tex-math>$10^{{12}}$ </tex-math></inline-formula>\u0000 cycles), and excellent uniformity in the fabricated SOT-MTJ devices, with a yield of up to 99.6%. The proposed integration process, featuring high yield, is anticipated to streamline the mass production of SOT-MRAM.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2094-2097"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic Carbonyl and Cyano Passivation for Efficient Blade-Coated Perovskite Solar Cells 羰基和氰基协同钝化，实现高效叶片涂层包覆型太阳电池

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454522

Xinxin Li;Long Zhou;Qianyu Chen;Yunlong Zhang;Xinyuan Feng;Yuanbo Du;Dazheng Chen;Weidong Zhu;He Xi;Jincheng Zhang;Chunfu Zhang;Yue Hao

{"title":"Synergistic Carbonyl and Cyano Passivation for Efficient Blade-Coated Perovskite Solar Cells","authors":"Xinxin Li;Long Zhou;Qianyu Chen;Yunlong Zhang;Xinyuan Feng;Yuanbo Du;Dazheng Chen;Weidong Zhu;He Xi;Jincheng Zhang;Chunfu Zhang;Yue Hao","doi":"10.1109/LED.2024.3454522","DOIUrl":"10.1109/LED.2024.3454522","url":null,"abstract":"Homogeneous and defect-minimized perovskite films are critical for efficient perovskite solar cells (PSCs). Herein, we introduce a small molecule with electron-rich carbonyl and cyano groups in the perovskite films to regulate the crystallization process and passivate defects. The electron-rich carbonyl and cyano groups of the FDP molecules could coordinate with Pb\u0000<inline-formula> <tex-math>$^{{2}+}$ </tex-math></inline-formula>\u0000 dangling bonds and reduce the density of VPb. The synergistic effect of crystallization modulation and defect passivation could significantly improve film quality and suppress carrier nonradiative recombination. As a result, the champion devices realize an increased efficiency of 23.39% for small areas (0.08 cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000 and a high efficiency of 20.69% for larger areas (1 cm\u0000<inline-formula> <tex-math>$^{{2}}text {)}$ </tex-math></inline-formula>\u0000. The inverted perovskite modules with an aperture area of 45 cm2 obtain a champion efficiency of 20.38%, indicating a teeny efficiency loss of 1.5% from 1 to 45 cm2. These findings provide an innovative avenue to achieve high-efficiency perovskite modules and facilitate the commercialization of large-area PSCs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2162-2165"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide 基于亚太赫兹波段 V 形正交光栅波导的新型双板束后向波振荡器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454508

Xinlun Xie;Guoxiang Shu;Jiacai Liao;Huaxing Pan;Shaochen Ma;Jiawei Tang;Siyuan Liu;Mingze Li;Wenlong He

{"title":"A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide","authors":"Xinlun Xie;Guoxiang Shu;Jiacai Liao;Huaxing Pan;Shaochen Ma;Jiawei Tang;Siyuan Liu;Mingze Li;Wenlong He","doi":"10.1109/LED.2024.3454508","DOIUrl":"10.1109/LED.2024.3454508","url":null,"abstract":"A sub-terahertz band dual-sheet-beam backward wave oscillator (BWO) highlighted with wide tunable bandwidth and enhanced radiation power is presented in this letter. This design includes two key innovations: 1) a novel V-shaped orthogonal grating waveguide (VOGW) operating in TM\u0000<inline-formula> <tex-math>$_{{21}}^{text {++}}$ </tex-math></inline-formula>\u0000 high-order mode (++ represents the electric field vectors within two beam tunnel regions are in-phase) is proposed, which exhibits higher coupling impedance compared with the traditional OGW; 2) a novel E-plane L-bend overmoded coupler with a tapered transition is designed for efficient power extraction of the TM\u0000<inline-formula> <tex-math>$_{{21}}^{text {++}}$ </tex-math></inline-formula>\u0000 mode. For verification, an interaction circuit made of 40-period VOGW and two identical couplers was fabricated, and the measured results agreed well with simulation predictions having considered conduct loss and assembly errors. PIC simulation for this innovative BWO predicts a stable radiation power of 182.4-317.5 W across 246.8-265.6 GHz, demonstrating a power increment of up to 43 W (~15%) in comparison to the OGW based BWO.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2201-2204"},"PeriodicalIF":4.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatial Electron-Spin Splitter Based on Rashba Spin-Orbit-Coupling Modulated Layered-Semiconductor Quantum Microstructure 基于拉什巴自旋轨道耦合调制层状半导体量子微结构的空间电子-自旋分离器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454235

Mao-Wang Lu;Sai-Yan Chen;Xue-Li Cao;An-Qi Zhang

引用次数: 0

Mechanically Tunable Broadband Electric Field Enhancement Resonator for Quantum Microwave Measurements 用于量子微波测量的机械可调谐宽带电场增强谐振器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454356

Zhiqian Wan;Yi Lin;Kai Yang;Yunqi Fu

引用次数: 0

Achieving Ultra-Wide Band Operation of the High-Power Sheet Beam TWT by Using Novel Double-Ridge Staggered Vane Structure 利用新型双脊交错叶片结构实现大功率片束 TWT 的超宽带运行

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-04 DOI: 10.1109/LED.2024.3454267

Zihao Dai;Jianxun Wang;Yixin Wan;Xinjie Li;Jingzhi Zheng;Yuan Fang;Hao Li;Yong Luo

引用次数: 0

Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation 通过原位氧化硅有效缓解 AlGaN 太阳能盲场效应光电晶体管中的持续光电导现象

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-03 DOI: 10.1109/LED.2024.3453913

Zhuoya Peng;Mian Wu;Zesheng Lv;Shouqiang Yang;Mengyao Song;Yv Yin;Hao Jiang

引用次数: 0

Over 50 mA Current in Interdigitated Diamond Field Effect Transistor 互嵌式金刚石场效应晶体管中的电流超过 50 mA

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-03 DOI: 10.1109/LED.2024.3453504

Damien Michez;Juliette Letellier;Imane Hammas;Julien Pernot;Nicolas Rouger

{"title":"Over 50 mA Current in Interdigitated Diamond Field Effect Transistor","authors":"Damien Michez;Juliette Letellier;Imane Hammas;Julien Pernot;Nicolas Rouger","doi":"10.1109/LED.2024.3453504","DOIUrl":"10.1109/LED.2024.3453504","url":null,"abstract":"This letter presents the bulk diamond field-effect transistor (FET) with the highest current value reported at this moment on 3.5\u0000<inline-formula> <tex-math>$times $ </tex-math></inline-formula>\u00003.5 mm2 Ib diamond substrate. The goal was to drastically increase the current of this type of device by increasing the total gate width thanks to an interdigitated architecture and homogeneous growth properties. The device develops a total gate width of 14.7 mm, with 24 paralleled fingers and a current higher than 50 mA at V \u0000<inline-formula> <tex-math>$_{text {DS}} = -15$ </tex-math></inline-formula>\u0000 V and V \u0000<inline-formula> <tex-math>$_{text {GS}} =0$ </tex-math></inline-formula>\u0000 V, at 450 K and under illumination. Its specific ON-resistance and threshold voltage are respectively 608 m \u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000.cm2, 50 V. Resistivity of 3.6 m\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000.cm for a heavily boron-doped (p++)-diamond layer and \u0000<inline-formula> <tex-math>$1.52Omega cdot $ </tex-math></inline-formula>\u0000cm for a \u0000<inline-formula> <tex-math>$2.10^{{17}}$ </tex-math></inline-formula>\u0000 cm−3 p-doped diamond layer were extracted at 450 K. This study indicates that it is possible to drastically improve the ON-state of FETs by using an interdigitated architecture, while using homogeneous large size diamond layers grown by CVD.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2058-2061"},"PeriodicalIF":4.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142222906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Bent-TBTF Resonant MEMS Accelerometer Using Auxiliary Supporting Beams 使用辅助支撑梁的 Bent-TBTF 共振 MEMS 加速计

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-02 DOI: 10.1109/LED.2024.3453324

Cheng Tu;Yi-Ming Pan;Zenghui Wang;Xiao-Sheng Zhang

引用次数: 0

A MEMS Thermopile With Al Decorated Nanoforests Capable of Broadband UV Detection 具有铝装饰纳米森林的 MEMS 热电堆，可进行宽带紫外线探测

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-09-02 DOI: 10.1109/LED.2024.3453291

Yonglong Pu;Huabin Yang;Meng Shi;Qirui Zhang;Na Zhou;Chengjun Huang;Haiyang Mao

引用次数: 0