IEEE Electron Device Letters最新文献_第8页

Nanosheet Transistors Produced in 300 mm Fabrication Platform for Quantum Computing 在300毫米量子计算制造平台上生产纳米片晶体管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-01 DOI: 10.1109/LED.2025.3556348

Claude Rohrbacher;Dominic Leclerc;Joffrey Rivard;Romain Ritzenthaler;Christian Lupien;Hans Mertens;Naoto Horiguchi;Eva Dupont-Ferrier

引用次数: 0

3D/2D Core-Shell CsPbBr₃ Microcrystals for Stable X-Ray Detection and Imaging 用于稳定x射线探测和成像的3D/2D核壳CsPbBr₃微晶体

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-01 DOI: 10.1109/LED.2025.3556477

Xiaoli Wang;Xingzhou Su;Wenxuan Yang;Zhiyuan Liu;Wenjie Luo;Binyun Han;Bin Tian;Dong Li;Xingchen He;Yang Zhang;Xue-Feng Yu;Yanliang Liu

{"title":"3D/2D Core-Shell CsPbBr₃ Microcrystals for Stable X-Ray Detection and Imaging","authors":"Xiaoli Wang;Xingzhou Su;Wenxuan Yang;Zhiyuan Liu;Wenjie Luo;Binyun Han;Bin Tian;Dong Li;Xingchen He;Yang Zhang;Xue-Feng Yu;Yanliang Liu","doi":"10.1109/LED.2025.3556477","DOIUrl":"https://doi.org/10.1109/LED.2025.3556477","url":null,"abstract":"Although metal halide perovskite (MHP) materials are promising candidates for direct X-ray detection, the surface and internal defects of perovskite polycrystalline thick films lead to severe noise current and poor device stability. Herein, a phenylethylammonium (PEA+) cladding layer was integrated with 3D CsPbBr3 grains, forming 3D/2D core-shell CsPbBr3 perovskite microcrystals. The PEA+, acting as the A-site cation, is able to passivate the surface defects, while the forming 2D perovskite cladding layer inhibits ion migration within CsPbBr3 grains. The blade-coated polycrystalline 3D/2D core-shell CsPbBr3 perovskite thick film exhibits a reduced trap density from <inline-formula> <tex-math>${4}.{32}times {10} ^{{10}}$ </tex-math></inline-formula> cm−3 to <inline-formula> <tex-math>${4}.{26}times {10} ^{{9}}$ </tex-math></inline-formula> cm−3 compared to conventional CsPbBr3 film, with ion migration activation energy increasing from 123 meV to 210 meV. Consequently, the obtained perovskite X-ray detector exhibits a high sensitivity of 29,<inline-formula> <tex-math>$460~mu $ </tex-math></inline-formula> C Gy<inline-formula> <tex-math>${}_{text {air}}^{-{1}}$ </tex-math></inline-formula> cm−2 and a low detection limit of 84 nGyair s−1 (50 keV X-ray photon energy), and the detector maintains long-term operational stability with a dark current drift as low as <inline-formula> <tex-math>${4}.{12}times {10} ^{-{5}}$ </tex-math></inline-formula> nA mm−1 s−1 V−1. Furthermore, we integrated the 3D/2D core-shell polycrystalline CsPbBr3 with a TFT chip (<inline-formula> <tex-math>${64}times {64}$ </tex-math></inline-formula> array) and successfully obtained a clear and high-contrast X-ray image of a mouse’s paw exhibiting a spatial resolution of 2.5 lp mm−1.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"936-939"},"PeriodicalIF":4.1,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microfabricated 3D Optimized Rubidium Vapor Cell Array for Low Cost Atomic Magnetometer 用于低成本原子磁强计的微制造3D优化铷蒸气电池阵列

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-04-01 DOI: 10.1109/LED.2025.3556773

Wenqi Li;Zhongxun Wang;Pengguang Liu;Jintang Shang

{"title":"Microfabricated 3D Optimized Rubidium Vapor Cell Array for Low Cost Atomic Magnetometer","authors":"Wenqi Li;Zhongxun Wang;Pengguang Liu;Jintang Shang","doi":"10.1109/LED.2025.3556773","DOIUrl":"https://doi.org/10.1109/LED.2025.3556773","url":null,"abstract":"Wearable biomagnetic field mapping with multiple-channel atomic magnetometers (AMs) requires low-cost microfabricated rubidium vapor cell arrays (RVCAs) of high performance. In this letter, an innovative microfabricated 3D RVCA with optimized polarization lifetime is proposed and demonstrated at a wafer level. To characterize the influence of vapor cell geometry on polarization lifetime, the 3D RVCA with four interconnected light-atom interaction chambers of uniform internal buffer gas pressure (0.7 amg) and various surface-to-volume ratios (17.61, 18.15, 20.95, and 27.14 cm-1) are prepared. For the first time, we utilize single-beam configuration to characterize microfabricated 3D RVCA by extrapolating to vanishing light intensity. We measure the intrinsic polarization lifetime of the four chambers within an 3D RVCA. The results indicate that decreasing the surface-to-volume ratio of the chamber in 3D RVCA at 413 K substantially improves the polarization lifetime by 129.3%. Measurements conducted across varying temperature all demonstrate that reductions in surface-to-volume ratios positively influence the enhancement of the polarization lifetime. The proposed RVCA offers critical insights for low-cost and high-performance chip-scale AM array based on microfabricated 3D atomic vapor cells.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"980-983"},"PeriodicalIF":4.1,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultraviolet Induced Effects on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Relatively Short Channel Lengths 紫外光对非晶铟镓锌氧化物薄膜晶体管的诱导效应

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-31 DOI: 10.1109/LED.2025.3553940

Po-Hsun Chen;Kuan-Ju Zhou;Cheng-Hsien Lin

{"title":"Ultraviolet Induced Effects on Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Relatively Short Channel Lengths","authors":"Po-Hsun Chen;Kuan-Ju Zhou;Cheng-Hsien Lin","doi":"10.1109/LED.2025.3553940","DOIUrl":"https://doi.org/10.1109/LED.2025.3553940","url":null,"abstract":"This study reports the ultraviolet (UV) light induced effects on the thin film transistor (TFT) based on the amorphous indium-gallium-tin-oxide (IGZO) material with the double gate structure. Under UV light exposure, the n-type TFT device with the relatively short channel (<inline-formula> <tex-math>$4mu $ </tex-math></inline-formula>m) can exhibit good response, compared to those with the relatively long channel according to the electrical measurements. In addition, continuous sweeping cycles up to 1000 cycles with and without UV light source suggest its robust endurance characteristics without obvious degradations. Then, constant dynamic light switching cycles up to 2000 cycles are tested and also verified with different light sources. To further examine the UV induced effects, various electrical operations and light intensities are carried out. The experimental results indicate that the device with a relatively short channel exhibits excellent UV light responsiveness and high reliability when exposed to a selective light source, demonstrating its potential for UV sensor or light-switching applications compared to conventional UV sensing devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"777-780"},"PeriodicalIF":4.1,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of TDI Imaging Sensor Pixel for Low Power Consumption and High-Speed Applications 低功耗和高速应用的TDI成像传感器像素设计

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-31 DOI: 10.1109/LED.2025.3556414

Siyu Guo;Assaf Lahav;Quan Zhou;Pierre Boulenc;Alexander V. Klekachev;Xinjie Zhuang;Xinyang Wang

引用次数: 0

A Digital 2-bit Logic Device Utilizing a MEMS Frequency Comb Generator 一种利用MEMS频率梳发生器的数字2位逻辑器件

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-31 DOI: 10.1109/LED.2025.3555965

Hongyu Chen;Dongyang Chen;Chen Wang;Bernardo Pereira Madeira;Ruochen Ding;Yuan Wang;Michael Kraft;Jin Xie

{"title":"A Digital 2-bit Logic Device Utilizing a MEMS Frequency Comb Generator","authors":"Hongyu Chen;Dongyang Chen;Chen Wang;Bernardo Pereira Madeira;Ruochen Ding;Yuan Wang;Michael Kraft;Jin Xie","doi":"10.1109/LED.2025.3555965","DOIUrl":"https://doi.org/10.1109/LED.2025.3555965","url":null,"abstract":"This letter presents a digital 2-bit logic device based on a microelectromechanical (MEMS) frequency comb generator, leveraging the high tunability of the mechanical frequency comb. The device utilizes a MEMS capacitive ring resonator to produce an electrostatically actuated frequency comb, which can execute 2-bit logic operations, i.e., AND, OR, XOR, NOT, NOR, NAND, and XNOR. Utilizing the accurate control of frequency combs, this system enables flexible and dynamic logic processing, where pump signals to the resonator act as inputs and the mechanical oscillations of the resonator provide corresponding logic outputs. The proposed MEMS logic device demonstrates good performance, with a response time of approximately ~0.3 s and an energy consumption per switching cycle of <inline-formula> <tex-math>$sim 10^{-{13}}$ </tex-math></inline-formula> J. This study demonstrates the potential of frequency comb generation for digital logic, proposing an innovative approach that complements traditional components like transistors and highlights opportunities for integrating MEMS-based frequency comb generators in future mechanical computing systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"976-979"},"PeriodicalIF":4.1,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A High-Power RF SOI Switch With 48.7-dBm P-₀.₁dB Peak Power for 5G MIMO Applications 48.7 dbm P- 0大功率RF SOI开关。5G MIMO应用的1₁dB峰值功率

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-31 DOI: 10.1109/LED.2025.3556581

Wanfu Liu;Jianhui Wu

{"title":"A High-Power RF SOI Switch With 48.7-dBm P-₀.₁dB Peak Power for 5G MIMO Applications","authors":"Wanfu Liu;Jianhui Wu","doi":"10.1109/LED.2025.3556581","DOIUrl":"https://doi.org/10.1109/LED.2025.3556581","url":null,"abstract":"In this brief, a high-power RF switch that operates at <inline-formula> <tex-math>$2sim 4$ </tex-math></inline-formula> GHz is designed and implemented using 130nm RF SOI technology. To improve the high-power handling capability in Tx mode, a series and parallel stacked structure with uniform voltage division across an OFF-shunt branch was proposed and analyzed. For the shunt branch of RF switch, the Vds voltage discrepancy of each transistor under high power is balanced by adjusting the width ratio between transistors, ensuring high-power handling capability. Moreover, the suggested design employs capacitor-based compensation to further equalize the voltage division. The experimental results demonstrate that the proposed RF switch achieves 48.7 dBm (74W) of 0.1 dB compression point (P-0.1dB, peak power), <inline-formula> <tex-math>$0.35sim 0.87$ </tex-math></inline-formula> dB insertion loss, transmit-receive isolation (Tx-Rx ISO) >35.7 dB at <inline-formula> <tex-math>$105~^{circ }$ </tex-math></inline-formula>C. The reported structural design ensures stability and reliability under high-power operating, providing significant potential for 5G MIMO applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 6","pages":"964-967"},"PeriodicalIF":4.1,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144135251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neuromorphic Device Based on Solution-Processed WSe2 Nanoflake Synaptic Transistors 基于溶液处理的WSe2纳米片突触晶体管的神经形态器件

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-28 DOI: 10.1109/LED.2025.3554009

Taoyu Zou;Chengpeng Jiang;Wentao Xu;Yong-Young Noh

引用次数: 0

EDS Meetings Calendar EDS会议日程表

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-03-26 DOI: 10.1109/LED.2025.3551191