IEEE Electron Device Letters最新文献_第8页

EDS Meetings Calendar EDS会议日程表

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540234

引用次数: 0

Non-Stationary Wide-Band Operation of a High-Current Relativistic Gyrotron 大电流相对论回旋管的非平稳宽带运行

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3545935

E. B. Abubakirov;A. N. Denisenko;N. S. Ginzburg;A. N. Leontyev;R. M. Rozental;A. S. Sergeev;I. V. Zotova

引用次数: 0

Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing 诚聘IEEE半导体制造汇刊主编

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540226

引用次数: 0

SnS₂/WSe₂ van der Waals Single-Detector Spectrometer With a Dynamically Selecting Spectral Reconstruction Strategy 基于动态选择光谱重建策略的SnS₂/WSe₂范德瓦尔斯单探测器光谱仪

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3545960

Yang Zhou;Haoran Mu;Congwen Zhang;Renjing Xu;Guangyu Zhang;Shenghuang Lin

{"title":"SnS₂/WSe₂ van der Waals Single-Detector Spectrometer With a Dynamically Selecting Spectral Reconstruction Strategy","authors":"Yang Zhou;Haoran Mu;Congwen Zhang;Renjing Xu;Guangyu Zhang;Shenghuang Lin","doi":"10.1109/LED.2025.3545960","DOIUrl":"https://doi.org/10.1109/LED.2025.3545960","url":null,"abstract":"The single-detector spectrometers based on 2D layer van der Waals (vdW) heterojunctions offer advantages in spectral reconstruction due to their high sensitivity, tunable optical properties, and the ability to cover a broad spectral range. There exist two principal algorithms dominating spectrum reconstruction for this kind spectrometer: the Tikhonov regularization method combined with the Least Squares Method (LSM) and neural network-based approaches, particularly Deep Learning (DL). However, both of the algorithms exhibit inherent limitations in spectral reconstruction, which constrain the versatility of computational spectrometers that rely solely on a single algorithm for reconstructing diverse spectral profiles. To overcome this limitation, we introduce an artificial neural network (ANN)-based classification model capable of dynamically selecting the optimal algorithm throughout the reconstruction process. This enables highly accurate spectral reconstruction within the 440-700 nm wavelength range, achieving a spectral resolution of 6 nm. By harnessing the complementary strengths of multiple algorithms, our approach proposes a novel strategy for combining techniques to enhance the precision of spectral reconstructions, laying the groundwork for more sophisticated methods in the future.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"801-804"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON 1.27 GW/cm²反向阻断e模GaN-Si（100）单片异构级联开关，超低导通电压和动态RON

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-25 DOI: 10.1109/LED.2025.3545417

Yutong Fan;Weihang Zhang;Yachao Zhang;Yinhe Wu;Xin Feng;Zhihong Liu;Yang Jiang;Pui In Mak;Yue Hao;Jincheng Zhang

{"title":"1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON","authors":"Yutong Fan;Weihang Zhang;Yachao Zhang;Yinhe Wu;Xin Feng;Zhihong Liu;Yang Jiang;Pui In Mak;Yue Hao;Jincheng Zhang","doi":"10.1109/LED.2025.3545417","DOIUrl":"https://doi.org/10.1109/LED.2025.3545417","url":null,"abstract":"In this letter, an E-Mode GaN-Si(100) monolithic heterogeneous integration cascode switch (RBMHIC-switch) with reverse blocking compatibility on a SiC substrate with an AlN buffer layer is demonstrated. The RBMHIC-switch with LGD of <inline-formula> <tex-math>$22~mu $ </tex-math></inline-formula>m showed a threshold voltage (VTH) of 2.64 V, a large forward gate voltage swing of 16.27 V, a turn-on voltage (VON) of 0.3 V, and an extremely low reverse leakage current (IR) of <inline-formula> <tex-math>$3.5times 10^{-{4}}$ </tex-math></inline-formula> mA/mm at -2000 V. The forward breakdown voltage (VFBR) of 2264 V and reverse breakdown voltage (VRBR) of 2183 V with a specific on-resistance (<inline-formula> <tex-math>$R_{text {ON}, text {SP}}$ </tex-math></inline-formula>) of 3.74 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula> cm2 were achieved, resulting in a forward power figure of merit (PFOM = V<inline-formula> <tex-math>$_{text {BR}}^{{2}}$ </tex-math></inline-formula>/RON,SP) of 1.35 GW/cm2 and reverse PFOM of 1.27 GW/cm2. The ratio between dynamic-RON and static-RON was 1.104 and 1.127 after a 10 ms 1900 V drain stress voltage (V<inline-formula> <tex-math>$_{text {DS}-text {OFF}}$ </tex-math></inline-formula>) and a 10 ms -1900 V V<inline-formula> <tex-math>$_{text {DS}-text {OFF}}$ </tex-math></inline-formula> (delay time <inline-formula> <tex-math>$= 1~mu $ </tex-math></inline-formula>s) for the RBMHIC-switches, respectively, which were the best among all existing GaN power devices with reverse blocking capability. The thermal resistance at different temperatures was also extracted. The RBMHIC-switche shows decent overall characteristics as compared to the reported results.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"805-808"},"PeriodicalIF":4.1,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10902610","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental Study of Heavy Ion Irradiation Hardness for p-GaN HEMTs Under Off-State With Negative Gate Voltage 负栅极电压关断状态下p-GaN HEMTs重离子辐照硬度的实验研究

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-25 DOI: 10.1109/LED.2025.3545440

Xintong Xie;Shuxiang Sun;Jingyu Shen;Renkuan Liu;Gaoqiang Deng;Cheng Yang;Xin Zhou;Jie Wei;Bo Zhang;Xiaorong Luo

{"title":"Experimental Study of Heavy Ion Irradiation Hardness for p-GaN HEMTs Under Off-State With Negative Gate Voltage","authors":"Xintong Xie;Shuxiang Sun;Jingyu Shen;Renkuan Liu;Gaoqiang Deng;Cheng Yang;Xin Zhou;Jie Wei;Bo Zhang;Xiaorong Luo","doi":"10.1109/LED.2025.3545440","DOIUrl":"https://doi.org/10.1109/LED.2025.3545440","url":null,"abstract":"In this work, it is demonstrated for the first time that a negative gate voltage (<inline-formula> <tex-math>${V} _{text {GS}}$ </tex-math></inline-formula>) during off-state can enhance the single-event effect (SEE) hardness of the 100-V E-mode p-GaN HEMTs. When subjected to irradiation from Ta ions with linear energy transfer of 78.40 MeV/(mg/cm2), the single-event transient (SET) current peak during irradiation can be significantly decreased if a negative <inline-formula> <tex-math>${V} _{text {GS}}$ </tex-math></inline-formula> is applied, as opposed to using zero <inline-formula> <tex-math>${V} _{text {GS}}$ </tex-math></inline-formula>. Furthermore, a negative <inline-formula> <tex-math>${V} _{text {GS}}$ </tex-math></inline-formula> suppresses post-irradiation shifts in gate capacitance (<inline-formula> <tex-math>${C} _{text {G}}$ </tex-math></inline-formula>), threshold voltage (<inline-formula> <tex-math>${V} _{text {th}}$ </tex-math></inline-formula>) and off-state drain leakage current (<inline-formula> <tex-math>${I} _{text {DSS}}$ </tex-math></inline-formula>), indicating improved stability against SEE. Numerical simulations have been performed to offer a physical insight into the underlying mechanisms. It is found that a negative <inline-formula> <tex-math>${V} _{textit {GS}}$ </tex-math></inline-formula> enables the simultaneous removal for radiation-induced holes and thus suppresses the SET current. The post-irradiation degradation of <inline-formula> <tex-math>${C} _{G}$ </tex-math></inline-formula>, <inline-formula> <tex-math>${V} _{text {th}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${I} _{text {DSS}}$ </tex-math></inline-formula> are attributed to the radiation-induced acceptor-like traps at the Schottky junction, the AlGaN/GaN interface and the buffer layer, respectively.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"709-712"},"PeriodicalIF":4.1,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxygen Plasma Treatment-Improved Source/Drain Contact Property for Achieving High-Performance ZnO Transistors 氧等离子体处理改善源极/漏极接触特性，实现高性能ZnO晶体管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-25 DOI: 10.1109/LED.2025.3545428

Tingchen Yi;Chuanlin Sun;Junchen Dong;Dedong Han;Lin Bao;Zongwei Wang;Yimao Cai;Xing Zhang

{"title":"Oxygen Plasma Treatment-Improved Source/Drain Contact Property for Achieving High-Performance ZnO Transistors","authors":"Tingchen Yi;Chuanlin Sun;Junchen Dong;Dedong Han;Lin Bao;Zongwei Wang;Yimao Cai;Xing Zhang","doi":"10.1109/LED.2025.3545428","DOIUrl":"https://doi.org/10.1109/LED.2025.3545428","url":null,"abstract":"Oxide transistors are of increasing interest in the field of integrated circuits. In this work, we explore the effects of oxygen plasma treatment on source/drain (S/D) region contact property of the ZnO transistors. Through film characterization, we found that oxygen plasma treatment process not only helps to improve surface morphology of the S/D region but also increases the oxygen vacancies in the ZnO active layer of the device. This suggests the promotion of bonding between the ZnO active layer and the Al S/D electrode, thus reducing the contact barrier and contact resistance. With an oxygen plasma treatment time of 2 min, a distinct decrease of 96.50% in the S/D resistance (R<inline-formula> <tex-math>$_{mathbf {c}}$ </tex-math></inline-formula>) is achieved, and electrical performance of the ZnO transistors obtains comprehensive improvement. The major properties of the optimized ZnO transistors include a field-effect mobility of 39.56 cm2/Vs, an on-to-off current ratio of <inline-formula> <tex-math>${2}.{89}times {10}^{{{7}}}$ </tex-math></inline-formula>, a sub-threshold swing of 103.01 mV/decade, and a threshold voltage of -0.50 V. Our work provides an effective strategy to fabricate high-performance ZnO transistors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"757-760"},"PeriodicalIF":4.1,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room Temperature Polymer-Based Hybrid Bonding Scheme for 3D Integration and Advanced Packaging 三维集成和先进封装的室温聚合物杂化键合方案

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-25 DOI: 10.1109/LED.2025.3545557

Yuan-Chiu Huang;Yu-Xian Lin;Chien-Kang Hsiung;Kuan-Neng Chen

引用次数: 0

Demonstration of Spin Orbit Torque Multi-Level Cell With Enhanced State Distinction 增强状态区分的自旋轨道转矩多级单元论证

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-25 DOI: 10.1109/LED.2025.3545373

Zhaohao Wang;Min Wang;Jinhao Li;Chenyi Wang;Hongchao Zhang;Kewen Shi;Bi Wang;Yuanfu Zhao;Weisheng Zhao

引用次数: 0

Measuring Direct Flexoelectricity at the Nanoscale 在纳米尺度上测量直接柔性电

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-20 DOI: 10.1109/LED.2025.3541892

Daniel Moreno-Garcia;Luis Guillermo Villanueva

{"title":"Measuring Direct Flexoelectricity at the Nanoscale","authors":"Daniel Moreno-Garcia;Luis Guillermo Villanueva","doi":"10.1109/LED.2025.3541892","DOIUrl":"https://doi.org/10.1109/LED.2025.3541892","url":null,"abstract":"Flexoelectricity is a property of all dielectric materials, where inhomogeneous strain induces electrical polarization. This effect becomes particularly prominent at the nanoscale where larger strain gradients can be obtained. While flexoelectric charges have been measured in mm-scale systems, direct measurements in nanoscale-thickness materials have not yet been achieved. Given that one of the most prominent applications of flexoelectricity is in nano-electro-mechanical systems (NEMS), confirming the presence and magnitude of the effect at these scales is essential. This study presents the first-ever measurements of flexoelectric-generated currents (direct effect) in nanoscale-thickness materials, using cantilevers with a 50 nm hafnium oxide layer. We confirm that the estimated flexoelectric coefficient from said measurements aligns with the values obtained from complementary experiments using the flexoelectric inverse effect. Additionally, by changing the cantilever geometry (modifying the width of the cantilevers), we demonstrate a 40% increase in the effective flexoelectric coefficient, explained by the interplay of different flexoelectric tensor components. These findings not only validate the presence of flexoelectric effects at the nanoscale but also open the possibility for full flexoelectric transduction of the motion in NEMS/MEMS devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 4","pages":"648-651"},"PeriodicalIF":4.1,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0