IEEE Electron Device Letters最新文献_第8页

Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531369

Meng Zhang;Bo Wang;Yuwei Zhao;Zhendong Jiang;Lei Lu;Yan Yan;Lung-Chien Chen;Man Wong;Hoi-Sing Kwok

引用次数: 0

Enhancing the Performance for High-Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Using Self-Assembled Chip-Scale Inclined Sidewall

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531443

Linbo Hao;Liu Wang;Yanan Guo;Xue-Jiao Sun;Kai Guo;Congmin Shen;Tong Zhang;Xiaona Zhang;Shen Wang;Xiaojun Jia;Junxi Wang;Jinmin Li;Yonghui Zhang;Zi-Hui Zhang;Naixin Liu;Jianchang Yan

{"title":"Enhancing the Performance for High-Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Using Self-Assembled Chip-Scale Inclined Sidewall","authors":"Linbo Hao;Liu Wang;Yanan Guo;Xue-Jiao Sun;Kai Guo;Congmin Shen;Tong Zhang;Xiaona Zhang;Shen Wang;Xiaojun Jia;Junxi Wang;Jinmin Li;Yonghui Zhang;Zi-Hui Zhang;Naixin Liu;Jianchang Yan","doi":"10.1109/LED.2025.3531443","DOIUrl":"https://doi.org/10.1109/LED.2025.3531443","url":null,"abstract":"It is well known that inclined sidewall scattering structures can improve the light extraction efficiency (LEE) of micro deep ultraviolet (DUV) light-emitting diodes (LEDs). However, effective inclined sidewall designs for chip-scale high-power DUV LEDs are rarely reported. In this work, we use a fluorine-based oily liquid to form a self-assembled liquid cup. It has a chip-scale inclined sidewall surrounding the DUV LED chip. Experimental and simulation results show that the LEE of DUV LED with liquid cup is significantly enhanced. It can be attributed to the enlarged light escape cone, the additional out-light areas, and the scattering effects of the inclined sidewall. Consequently, the proposed DUV LED achieves a wall-plug efficiency (WPE) of 10.7% at 350 mA. Compared to conventional DUV LEDs, the WPE is enhanced by 64.9%. Moreover, the optical field distribution shows more light from the proposed DUV LED is deflected towards the vertical direction. This method shows great potential to advance high-power DUV LED development and expedite the replacement of mercury lamps.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"377-380"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Al-Drain Silicon Transistor With Ultra-Steep Subthreshold Slope and Low Operating Voltage

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531560

Zhibo Chen;Weiao Chen;Baowei Yuan;Yingxin Chen;Chengjie Tang;Weizhuo Gan;Chunsong Zhao;Zhaozhao Hou;Qiang Zhang;Jiachen Gao;Jiale Wang;Jeffrey Xu;Shisheng Xiong;Jing Wan;Ye Lu

{"title":"An Al-Drain Silicon Transistor With Ultra-Steep Subthreshold Slope and Low Operating Voltage","authors":"Zhibo Chen;Weiao Chen;Baowei Yuan;Yingxin Chen;Chengjie Tang;Weizhuo Gan;Chunsong Zhao;Zhaozhao Hou;Qiang Zhang;Jiachen Gao;Jiale Wang;Jeffrey Xu;Shisheng Xiong;Jing Wan;Ye Lu","doi":"10.1109/LED.2025.3531560","DOIUrl":"https://doi.org/10.1109/LED.2025.3531560","url":null,"abstract":"A mainstream silicon-based field effect transistor (FET) with sub-60mV/Dec subthreshold swing (SS) is long desired for ideal switching. In this letter, we experimentally demonstrated a novel silicon SOI MOSFET with Al drain, namely AlD-FET. The measurements show that the new device achieves an ultra-steep average SS of <inline-formula> <tex-math>$15~mu $ </tex-math></inline-formula>V/dec over 7 decades with high I<inline-formula> <tex-math>$_{text {ON}} gt 10~mu $ </tex-math></inline-formula>A/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m @ V<inline-formula> <tex-math>$_{text {DS}} = 1$ </tex-math></inline-formula>V, and the operating voltage for a sharp SS to occur can be as low as 0.4V. TCAD simulation reveals that the electrical field at Al-Silicon Schottky drain junction is significantly enhanced, and the depletion region under Al drain is elongated. Both facilitate a stronger impact ionization effect at a low VDS to take place, and the additional positive feedback loop further enables the nearly ideal sharp switching.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"496-499"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polyvinylidene Fluoride Enhanced Quantum Dot Short-Wave Infrared Photodetectors

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3532323

Haibo Zhu;Zhiwei Yang;Haoxuan Xu;Tao Cao;Simin Chen;Fan Fang;Haodong Tang;Jun Tang;Junjie Hao;Dan Wu;Xinan Zhang;Kai Wang;Wei Chen

引用次数: 0

Experimental Investigation on the Electrical Properties of a-InGaZnO Thin-Film Transistors Under Total Dose Ionizing Radiation

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-17 DOI: 10.1109/LED.2025.3531357

Guangan Yang;Geng Huang;Hong Zhu;Haotian Wu;Tianzhen Li;Tingrui Huang;Zuoxu Yu;Yong Xu;Weifeng Sun;Wangran Wu;Jinshun Bi

{"title":"Experimental Investigation on the Electrical Properties of a-InGaZnO Thin-Film Transistors Under Total Dose Ionizing Radiation","authors":"Guangan Yang;Geng Huang;Hong Zhu;Haotian Wu;Tianzhen Li;Tingrui Huang;Zuoxu Yu;Yong Xu;Weifeng Sun;Wangran Wu;Jinshun Bi","doi":"10.1109/LED.2025.3531357","DOIUrl":"https://doi.org/10.1109/LED.2025.3531357","url":null,"abstract":"This work conducts an experimental study on the effects of total-ionizing-dose (TID) on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The threshold voltage (<inline-formula> <tex-math>${V}_{text {th}}text {)}$ </tex-math></inline-formula> exhibited a negative shift during irradiation, concomitant with a decline in carrier mobility (<inline-formula> <tex-math>$mu _{text {FE}}text {)}$ </tex-math></inline-formula> and an increase in off-current. The TID-induced H-related traps in the a-IGZO layer not only increase the free carriers but also passivate the oxygen vacancies, leading to a reduction in <inline-formula> <tex-math>$mu _{text {FE}}$ </tex-math></inline-formula> and on/off characteristics, as evidenced by the X-ray Photoelectron Spectroscopy (XPS) analysis. The irradiation damages on the a-IGZO TFTs were effectively mitigated and recovered through low-temperature (200°C) annealing, as confirmed by low-frequency noise (LFN) analysis. This approach offers a viable strategy for the radiation hardening of a-IGZO TFTs aiming at space applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"440-443"},"PeriodicalIF":4.1,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TCAD Study of Giant Negative Differential Resistance in Nanoscale Ferroelectric Field-Effect Transistors

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-15 DOI: 10.1109/LED.2025.3529864

Lars Prospero Tatum;Tsu-Jae King Liu

{"title":"TCAD Study of Giant Negative Differential Resistance in Nanoscale Ferroelectric Field-Effect Transistors","authors":"Lars Prospero Tatum;Tsu-Jae King Liu","doi":"10.1109/LED.2025.3529864","DOIUrl":"https://doi.org/10.1109/LED.2025.3529864","url":null,"abstract":"Semiconductor devices that exhibit a negative differential resistance (NDR) characteristic have long been sought after due to their promise of enabling more compact and/or more efficient integrated circuits compared to implementations using only complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs). A significant challenge for the development of NDR devices is the need for them to be compatible with established integrated circuit (IC) manufacturing processes while meeting the stringent performance and power requirements of modern IC designs. Ferroelectric FETs (FeFETs) based on CMOS-compatible, hafnia-based ferroelectric gate stack materials have been investigated broadly in the past decade for potential uses in nonvolatile memory, steeply switching logic devices, and neuromorphic computing. In this work a novel FeFET designed to achieve giant NDR behavior is investigated via TCAD simulation, and is projected to achieve peak current above 100 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>A/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m, sub-ns operating speed, and peak-to-valley current ratio (PVCR) exceeding 106, which can enable compact static memory bit-cells.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"508-511"},"PeriodicalIF":4.1,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Single Sweep Signal Enabled Analog PWM Pixel Circuit for Progressive-Emission Mode Active-Matrix Micro-LED Displays

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-14 DOI: 10.1109/LED.2025.3529745

Yuxuan Zhu;Congwei Liao;Lingxiao Qian;Shengdong Zhang

引用次数: 0

Microwave Gas Sensor Based on Differential Planar Resonator Synergistically Loaded With Pd-Doped CdSnO₃ for Enhanced H₂S Detection

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-14 DOI: 10.1109/LED.2025.3529663

Shanshan Xue;Quan Jin;Xiaolong Wang;Geyu Lu

引用次数: 0

A Fully Flexible Wireless Passive Strain Sensor Utilizing an Ultra-Thin Quartz Surface Acoustic Wave Resonator

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-14 DOI: 10.1109/LED.2025.3529686

Hanlun Guan;Danyu Mu;Yue Zhou;Hong Zhang;Hao Jin;Shurong Dong;Xiaoyi Wang;Feng Gao

{"title":"A Fully Flexible Wireless Passive Strain Sensor Utilizing an Ultra-Thin Quartz Surface Acoustic Wave Resonator","authors":"Hanlun Guan;Danyu Mu;Yue Zhou;Hong Zhang;Hao Jin;Shurong Dong;Xiaoyi Wang;Feng Gao","doi":"10.1109/LED.2025.3529686","DOIUrl":"https://doi.org/10.1109/LED.2025.3529686","url":null,"abstract":"Conventional wireless passive surface acoustic wave (SAW) strain sensors often employ rigid materials, limiting their application on curved surfaces. This letter presents a fully flexible wireless passive strain sensor, implemented by the flip-chip integration of an ultra-thin SAW device with a flexible antenna. The SAW sensor, fabricated on a 50-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m ST-cut quartz substrate with 200-nm aluminum electrodes, is coupled with a flexible antenna made by patterning copper electrodes on a polyimide substrate. Experimental evaluations include both wired and wireless tests, demonstrating the system’s sensitivity of 121.63 Hz/<inline-formula> <tex-math>$mu varepsilon $ </tex-math></inline-formula> within a dynamic range of <inline-formula> <tex-math>$5000~mu varepsilon $ </tex-math></inline-formula> and a wireless transmission range exceeding one meter. Besides, the system also exhibits excellent linearity and repeatability. The fully flexible sensor design enhances the system’s versatility, enabling deployment in challenging environments, such as confined or curved surfaces, particularly for structural health monitoring applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"472-475"},"PeriodicalIF":4.1,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Biocompatible and Reusable Synaptic Transistor With Efficient Electron-Ion Dynamic Coupling Interface

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-13 DOI: 10.1109/LED.2025.3528977

Wei Zhong;Xiaoen Chen;Xi Mo;Yayi Chen;Yao Ni;Aixiang Wei;Rongsheng Chen;Hoi Sing Kwok;Yuan Liu

{"title":"Biocompatible and Reusable Synaptic Transistor With Efficient Electron-Ion Dynamic Coupling Interface","authors":"Wei Zhong;Xiaoen Chen;Xi Mo;Yayi Chen;Yao Ni;Aixiang Wei;Rongsheng Chen;Hoi Sing Kwok;Yuan Liu","doi":"10.1109/LED.2025.3528977","DOIUrl":"https://doi.org/10.1109/LED.2025.3528977","url":null,"abstract":"The development of bio-based synaptic transistors faces significant challenges. These arise from conflicting requirements between the hydrophilic ion interface and the polar nature needed for the channel interface. To address this, we introduced modification layers between the channel and bio-based pectin. Specifically, we employed a method that simultaneously regulates hydrophobicity and polarity, thereby optimizing the electron-ion coupling interface. Through a comprehensive analysis of interface polarity and surface energy characteristics, we identified poly(methyl methacrylate) (PMMA) as the optimal modification material. PMMA not only enhances proton permeation but also significantly improves electron transport. Consequently, synaptic transistors incorporating PMMA modification layers demonstrated a marked increase in post-synaptic response intensity. Furthermore, these devices successfully replicated a wide range of complex synaptic functions, including applications such as image display with low-frequency suppression and enhanced contouring. In addition to its performance-enhancing properties, the PMMA modification layer serves as a protective shield, ensuring stable synaptic signal output under mechanical bending conditions for over <inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula> cycles. It also can maintain functionality throughout the cyclic degradation and replacement of ion interfaces. This research offers exciting potential for advancements in biocompatible and reusable electronics.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"504-507"},"PeriodicalIF":4.1,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0