IEEE Electron Device Letters最新文献_第8页

AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets AlN/GaN/AlGaN-on-Si HEMT在5v下实现1.3 W/mm，用于5G FR2手机

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-21 DOI: 10.1109/LED.2024.3483888

Hanchao Li;Hanlin Xie;Qingyun Xie;Siyu Liu;Yue Wang;Yuxuan Wang;Kumud Ranjan;Yihao Zhuang;Xiao Gong;Geok Ing Ng

{"title":"AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets","authors":"Hanchao Li;Hanlin Xie;Qingyun Xie;Siyu Liu;Yue Wang;Yuxuan Wang;Kumud Ranjan;Yihao Zhuang;Xiao Gong;Geok Ing Ng","doi":"10.1109/LED.2024.3483888","DOIUrl":"https://doi.org/10.1109/LED.2024.3483888","url":null,"abstract":"This Letter reports a double heterostructure (DH) AlN/GaN/AlGaN-on-Si HEMT, which has been proposed, for low voltage (LV, \u0000<inline-formula> <tex-math>$le 5$ </tex-math></inline-formula>\u0000 V) RF operation. The proposed transistor shows excellent DC (\u0000<inline-formula> <tex-math>${I}_{textit {dmax}} =1.9$ </tex-math></inline-formula>\u0000 A/mm, \u0000<inline-formula> <tex-math>${g}_{textit {mmax}} =0.66$ </tex-math></inline-formula>\u0000 S/mm) and RF small-signal characteristics (\u0000<inline-formula> <tex-math>${f}_{T}$ </tex-math></inline-formula>\u0000/\u0000<inline-formula> <tex-math>${f}_{textit {max}} =145$ </tex-math></inline-formula>\u0000/195 GHz). Continuous-wave (CW) load-pull measurements at 30 GHz yield \u0000<inline-formula> <tex-math>${P}_{textit {sat}}$ </tex-math></inline-formula>\u0000 of 0.6 (1.3) W/mm at V\u0000<inline-formula> <tex-math>$_{textit {ds}}$ </tex-math></inline-formula>\u0000 of 3.5 (5) V, and peak power-added efficiency (PAE) of 43% (42%). To the best of the authors’ knowledge, the \u0000<inline-formula> <tex-math>${P}_{textit {sat}}$ </tex-math></inline-formula>\u0000 values are the highest reported for LV GaN-on-Si HEMTs in 5G FR2, despite the use of conventional alloyed contacts and a gate length (\u0000<inline-formula> <tex-math>${L}_{g}$ </tex-math></inline-formula>\u0000) of 120 nm. Furthermore, among published LV GaN-on-Si HEMTs, the proposed transistor achieves a desired combination of saturation velocity (\u0000<inline-formula> <tex-math>${v} _{textit {sat}}$ </tex-math></inline-formula>\u0000) and knee voltage (\u0000<inline-formula> <tex-math>${V}_{textit {knee}}$ </tex-math></inline-formula>\u0000), which are critical factors for LV power amplification. The results reflect the promising potential of the proposed heterostructure to achieve high transmit power in 5G FR2 handsets.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2315-2318"},"PeriodicalIF":4.1,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photoresponsive IGZO Memcapacitor With Associative Learning Capability 具有联想学习能力的光响应IGZO Memcapacitor

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-21 DOI: 10.1109/LED.2024.3483841

Jing-Ting Ye;Jia-Wei Cai;Fei-Le Xue;Zhen-Ni Lu;Zhong-Da Zhang;Ya-Nan Zhong;Jian-Long Xu;Xu Gao;Sui-Dong Wang

引用次数: 0

Enhancing Selector-Only Memory Reliability Through Multi-Step Write Pulse 通过多步写入脉冲提高选择器专用存储器的可靠性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-21 DOI: 10.1109/LED.2024.3483960

Yoori Seo;Sanghyun Ban;Jangseop Lee;Dongmin Kim;Laeyong Jung;Hyunsang Hwang

引用次数: 0

AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure 具有弯栅结构的AlGaN/GaN hemm紫外光电晶体管

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-18 DOI: 10.1109/LED.2024.3483730

Biao Gong;Mei Ge;Xiao Wang;Bingjie Ye;Irina Nikolaevna Parkhomenko;Fadei Fadeevich Komarov;Jin Wang;Junjun Xue;Yu Liu;Guofeng Yang

{"title":"AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure","authors":"Biao Gong;Mei Ge;Xiao Wang;Bingjie Ye;Irina Nikolaevna Parkhomenko;Fadei Fadeevich Komarov;Jin Wang;Junjun Xue;Yu Liu;Guofeng Yang","doi":"10.1109/LED.2024.3483730","DOIUrl":"https://doi.org/10.1109/LED.2024.3483730","url":null,"abstract":"We have designed an AlGaN/GaN-based metal-heterostructure-metal (MHM) ultraviolet (UV) phototransistor (PT) with bent-Gate Structure. After partial etching of the AlGaN/GaN layer, an interdigital Ti/Al/Ni/Au metal stack was deposited on the GaN absorber layer to form an ohmic contact, which is in lateral contact with the AlGaN/GaN heterojunction to form a MHM structure. A bent gate was embedded between the interdigital ohmic electrodes to control the switching state of the two-dimensional electron gas (2DEG) channel. More importantly, benefiting from the strong polarization electric field in the lengthwise direction and the 2DEG high mobility channel in the lateral direction at the AlGaN/GaN heterojunction interface of the device, the device shows excellent photodetection performance: a peak responsivity (R) of \u0000<inline-formula> <tex-math>$6 times 10^{{4}}$ </tex-math></inline-formula>\u0000 A/W can be obtained under 265 nm UV irradiation, with a corresponding detectivity (D\u0000<inline-formula> <tex-math>$^{ast }$ </tex-math></inline-formula>\u0000) of \u0000<inline-formula> <tex-math>$8.28 times 10^{{16}}~text {cm}cdot text {W}^{-{1}}cdot text {Hz}^{text {1/2}}$ </tex-math></inline-formula>\u0000; and a responsivity of \u0000<inline-formula> <tex-math>$1.8 times 10^{{4}}$ </tex-math></inline-formula>\u0000 A/W can be obtained under 360 nm UV irradiation, with a corresponding D\u0000<inline-formula> <tex-math>$^{ast }$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$2.48 times 10^{{16}}~text {cm}cdot text {W}^{-{1}} cdot text {Hz}^{text {1/2}}$ </tex-math></inline-formula>\u0000. In addition, we have analyzed and investigated the operating principle of the designed device and the control mechanism of the bent gate using the theoretically simulated results of the device.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2335-2338"},"PeriodicalIF":4.1,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Torsional-via-Assisted Nanoelectromechanical Memory Switches 扭转过孔辅助纳米机电存储开关

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-18 DOI: 10.1109/LED.2024.3483752

Jin Wook Lee;Geun Tae Park;Myeong Su Shin;Woo Young Choi

引用次数: 0

An ε -Ga₂O₃-Based Surface Acoustic Wave Resonator for Deep Ultraviolet Detection 基于ε -Ga₂O₃的深紫外探测表面声波谐振器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-16 DOI: 10.1109/LED.2024.3480908

Jiahong Luo;Chenhong Huang;Yujia Tu;Zeyuan Fei;Zimin Chen;Weiqu Chen;Yanli Pei;Gang Wang;Xing Lu

{"title":"An ε -Ga₂O₃-Based Surface Acoustic Wave Resonator for Deep Ultraviolet Detection","authors":"Jiahong Luo;Chenhong Huang;Yujia Tu;Zeyuan Fei;Zimin Chen;Weiqu Chen;Yanli Pei;Gang Wang;Xing Lu","doi":"10.1109/LED.2024.3480908","DOIUrl":"https://doi.org/10.1109/LED.2024.3480908","url":null,"abstract":"<inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>\u0000-phase gallium oxide (\u0000<inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>\u0000-Ga2O\u0000<inline-formula> <tex-math>$_{{3}}$ </tex-math></inline-formula>\u0000) semiconductor offers an excellent potential for fabricating surface acoustic wave photodetectors (SAW PDs) to detect deep ultraviolet (deep-UV) light, taking advantage of its combination of an ultra-wide bandgap of \u0000<inline-formula> <tex-math>$sim ~4.9$ </tex-math></inline-formula>\u0000 eV and a strong piezoelectric property. In this letter, we developed SAW deep-UV PDs in a single-port resonator topology using an \u0000<inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>\u0000- Ga2O3 thin film grown on sapphire substrates. The device exhibited two resonate frequencies at 1.39 and 2.33 GHz, corresponding to the propagation of Rayleigh and Sezawa waves. The frequency shifts of the Rayleigh mode signal to a 254-nm wavelength UV illumination were investigated and discussed. The \u0000<inline-formula> <tex-math>$varepsilon $ </tex-math></inline-formula>\u0000-Ga2O3 SAW PDs in our study, yielding a competitive responsivity of 5.4 ppm\u0000<inline-formula> <tex-math>$cdot (mu $ </tex-math></inline-formula>\u0000W/cm\u0000<inline-formula> <tex-math>$^{{2}})^{text {-1}}$ </tex-math></inline-formula>\u0000, were demonstrated to be suitable for deep-UV detection.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2510-2513"},"PeriodicalIF":4.1,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment 等离子体增强氧化和部分氮化超临界流体处理改善Ge FinFET CMOS电学特性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-16 DOI: 10.1109/LED.2024.3479200

Dun-Bao Ruan;Kuei-Shu Chang-Liao;Kai-Chun Yang;Kai-Jhih Gan

{"title":"Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment","authors":"Dun-Bao Ruan;Kuei-Shu Chang-Liao;Kai-Chun Yang;Kai-Jhih Gan","doi":"10.1109/LED.2024.3479200","DOIUrl":"https://doi.org/10.1109/LED.2024.3479200","url":null,"abstract":"A novel plasma-enhanced supercritical phase fluid (SCF) process is proposed on a Ge FinFET CMOS inverter to resolve the insufficient oxidation in large-size chamber and unavailable nitridation effects with a SCF system. The metastable low oxidation states and interface traps in high-k and interfacial layer are clearly reduced by the supplemented oxygen and nitrogen radicals in SCF. As a result, Ge FinFET with enhanced oxidation and partially nitridation (EOPN)-SCF treatment exhibits an EOT value of 0.66 nm, drive current of 2.6 mA/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m (@V\u0000<inline-formula> <tex-math>$_{text {OV}}=1$ </tex-math></inline-formula>\u0000V), leakage current of 0.3 nA/\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m, ION/IOFF of \u0000<inline-formula> <tex-math>${7}times {10} ^{{5}}$ </tex-math></inline-formula>\u0000, S.S. value of 88 mV/dec, DIT of \u0000<inline-formula> <tex-math>${3}times {10} ^{{11}}$ </tex-math></inline-formula>\u0000 cm-2eV-1, fewer border traps, better reliability characteristics, more symmetrical VIN-VOUT and peak voltage gain of 58 V/V for CMOS inverter.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2276-2279"},"PeriodicalIF":4.1,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Uniformity and Reliability of Enhancement-Mode Polycrystalline Indium Oxide Thin Film Transistors Formed by Solid-Phase Crystallization 固相结晶形成的增强型多晶氧化铟薄膜晶体管的一致性和可靠性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-15 DOI: 10.1109/LED.2024.3480991

Naoki Okamoto;Xiaoqian Wang;Kotaro Morita;Yuto Kato;Mir Mutakabbir Alom;Yusaku Magari;Mamoru Furuta

{"title":"Uniformity and Reliability of Enhancement-Mode Polycrystalline Indium Oxide Thin Film Transistors Formed by Solid-Phase Crystallization","authors":"Naoki Okamoto;Xiaoqian Wang;Kotaro Morita;Yuto Kato;Mir Mutakabbir Alom;Yusaku Magari;Mamoru Furuta","doi":"10.1109/LED.2024.3480991","DOIUrl":"https://doi.org/10.1109/LED.2024.3480991","url":null,"abstract":"A bottom-gate thin-film transistor (TFT) with hydrogen-doped polycrystalline indium oxide (poly-InOx:H) channel was fabricated to investigate the uniformity and reliability of the TFT. The carrier density (\u0000<inline-formula> <tex-math>${N}_{text {e}}text {)}$ </tex-math></inline-formula>\u0000 of the poly-InOx:H film markedly decreased after solid-phase crystallization in air at 300°C, and a nondegenerate poly-InOx:H film with \u0000<inline-formula> <tex-math>${N}_{text {e}}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>${1}.{7}times {10} ^{{17}}$ </tex-math></inline-formula>\u0000 cm\u0000<inline-formula> <tex-math>$^{-{3}}$ </tex-math></inline-formula>\u0000 could be achieved. The TFT with a 30-nm-thick poly-InOx:H channel operated in enhancement mode (E-mode) after post-fabrication annealing at more than 300°C. The poly-InOx:H TFT exhibited good short-range uniformities with a field-effect mobility (\u0000<inline-formula> <tex-math>$mu _{text {FE}}text {)}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$32.0~pm ~0.39$ </tex-math></inline-formula>\u0000 (\u0000<inline-formula> <tex-math>$3sigma text {)}$ </tex-math></inline-formula>\u0000 cm2/Vs and a threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {t}}text {)}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$0.58~pm ~0.18$ </tex-math></inline-formula>\u0000 (\u0000<inline-formula> <tex-math>$3sigma text {)}$ </tex-math></inline-formula>\u0000 V. Furthermore, no threshold voltage shift was observed under negative gate bias and temperature stress at 60°C for 6,000 s.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2403-2406"},"PeriodicalIF":4.1,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

L-Band Diamond Amplifier With Multi-Finger Structure l波段金刚石多指结构放大器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-15 DOI: 10.1109/LED.2024.3480138

Ken Kudara;Yuji Komatsuzaki;Yutaro Yamaguchi;Shintaro Shinjo;Masakazu Arai;Hiroshi Kawarada

{"title":"L-Band Diamond Amplifier With Multi-Finger Structure","authors":"Ken Kudara;Yuji Komatsuzaki;Yutaro Yamaguchi;Shintaro Shinjo;Masakazu Arai;Hiroshi Kawarada","doi":"10.1109/LED.2024.3480138","DOIUrl":"https://doi.org/10.1109/LED.2024.3480138","url":null,"abstract":"This letter reports on an L-band diamond amplifier with a multi-finger structure. The \u0000<inline-formula> <tex-math>$0.5~mu $ </tex-math></inline-formula>\u0000m gate length two-dimensional hole gas diamond field-effect transistor, utilizing a multi-finger structure with a total gate width of 10 finger \u0000<inline-formula> <tex-math>$times 100~mu $ </tex-math></inline-formula>\u0000m, aims to enhance high-frequency performance due to low gate resistance compared to a double-finger structure. It demonstrates large-signal operation over 2 GHz with a total gate width of more than 1 mm, marking a first in diamond field-effect transistor. The development of this amplifier was achieved using an atomic layer deposition two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor, using a multi-finger structure with a total gate width of 10 finger \u0000<inline-formula> <tex-math>$times 50~mu $ </tex-math></inline-formula>\u0000m, alongside printed circuit board and surface mount devices components. The resulting diamond amplifier exhibited linear gains of more than 7 dB and output power levels of 20.7 dBm, with maximum drain efficiency of 3.5 % achieved at 1.8 GHz, with drain voltage of −40 V. Among diamond amplifiers, this configuration demonstrated the highest output power performance.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2491-2494"},"PeriodicalIF":4.1,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicon Nanomembrane Based Flexible Temperature-Bending Strain Dual-Mode Sensor Decoupled by Fast Fourier Transform 基于快速傅里叶变换解耦的硅纳米膜柔性温度弯曲应变双模传感器

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-15 DOI: 10.1109/LED.2024.3481255

Deyu Meng;Haonan Zhao;Xiaozhong Wu;Min Liu;Qinglei Guo

{"title":"Silicon Nanomembrane Based Flexible Temperature-Bending Strain Dual-Mode Sensor Decoupled by Fast Fourier Transform","authors":"Deyu Meng;Haonan Zhao;Xiaozhong Wu;Min Liu;Qinglei Guo","doi":"10.1109/LED.2024.3481255","DOIUrl":"https://doi.org/10.1109/LED.2024.3481255","url":null,"abstract":"Flexible dual-mode sensors that are capable of simultaneously sensing temperature and strain exhibit huge prospects in applications such as health monitoring, human-computer interaction, and intelligent robots. However, decoupling different stimuli accurately still faces severe challenges. In this study, we present a silicon based flexible dual-mode sensor that can be seamlessly attached to human body, enabling precise and real-time acquisition of physiological temperature and strain signals. The fabricated device only contains one sensing unit, with good sensing performances to both temperature and bending strain, including good linearity, high sensitivity, low hysteresis, and long-term stability. In various application scenarios, the fabricated dual-mode sensor can be utilized to monitor respiration, pulse, and body temperature. Moreover, due to different specific response times to temperature and strain, pulse and temperature signals obtained from the wrist can be successfully decoupled through the fast Fourier transform (FFT) and inverse FFT. These presented results offer significant potentials for the development of skin-inspired electronics with simple device structures and multifunctional capabilities.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2518-2521"},"PeriodicalIF":4.1,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0