IEEE Electron Device Letters最新文献_第8页

Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29 宣布IEEE/Optica出版集团光波技术杂志特刊：OFS-29

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577890

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Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 用于射频、功率和光电子应用的超宽带隙半导体器件

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577892

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EDS Meetings Calendar EDS会议日程表

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577884

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Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates With Ferroelectric AlScN Gate Stack 单片集成，可重构氧化镓NAND/NOR门与铁电AlScN栅极堆栈

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3584764

Sisung Yoon;Seungyoon Oh;Yoojin Lim;Ji-Hyeon Park;Dae-Woo Jeon;Geonwook Yoo

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Reliability of Advanced Nodes 高级节点可靠性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3575486

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IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577894

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IEEE Electron Device Letters Information for Authors IEEE电子器件通讯作者信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577886

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EOT of 0.28 nm in MIM Capacitor With Laminated HfZrON and In-Situ NH3 and O2 Plasma Treatments 采用层压HfZrON和原位NH3和O2等离子体处理的MIM电容器0.28 nm EOT

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-06-30 DOI: 10.1109/LED.2025.3584362

Huan Wu;Kuei-Shu Chang-Liao

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Simultaneous Dual-Mode Vital Signal Detection (PPG-Like and ECG) Utilizing a Piezotronic Bipolar Junction Transistor 利用压电双极结晶体管的同时双模生命信号检测（PPG-Like和ECG）

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-06-30 DOI: 10.1109/LED.2025.3584276

Emad Iranmanesh;Shijie Xing;Shuxin Lin;Abubakar Sharif;Charalabos Doumanidis;Hang Zhou;Kai Wang

{"title":"Simultaneous Dual-Mode Vital Signal Detection (PPG-Like and ECG) Utilizing a Piezotronic Bipolar Junction Transistor","authors":"Emad Iranmanesh;Shijie Xing;Shuxin Lin;Abubakar Sharif;Charalabos Doumanidis;Hang Zhou;Kai Wang","doi":"10.1109/LED.2025.3584276","DOIUrl":"https://doi.org/10.1109/LED.2025.3584276","url":null,"abstract":"The The integration of physiological signal detection into compact, multifunctional platforms is critical for advancing next-generation biomedical devices. We present a Piezotronic Bipolar Junction Transistor (PBJT) capable of simultaneous electrocardiogram (ECG) and photoplethysmogram-like (PPG-like) signal detection without external amplification or circuitry. Built from a ZnO/NiO/ZnO npn heterojunction on a flexible PET substrate, the device leverages the piezotronic effect to transduce mechanical signals and uses capacitive coupling through the thin PET layer to detect bioelectrical signals. Positioned on the neck over the jugular and carotid regions, and tested across multiple human subjects, the device captures biopotentials and pressure-induced deformations in real time. Band modulation analysis reveals distinct responses corresponding to ECG and PPG-like signals, while frequency-domain characterization confirms signal fidelity and strong ECG–PPG-like separation. This dual-mode functionality highlights the PBJT’s potential for compact, low-power, and integrated biosensing platforms for wearable health monitoring.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1557-1560"},"PeriodicalIF":4.5,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11058948","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144917300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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2.7 kV E-Mode Multichannel GaN-on-Si Based on p-Type NiO/SiO2 Junction Tri-Gate 基于p型NiO/SiO2结三栅极的2.7 kV e型多通道GaN-on-Si

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-06-30 DOI: 10.1109/LED.2025.3584531

Amirhossein Esteghamat;Zheng Hao;Mohammad Rezaei;Walid El Huni;Huseyin Cakmak;Gilberto Curatola;Samir Mouhoubi;Elison Matioli

{"title":"2.7 kV E-Mode Multichannel GaN-on-Si Based on p-Type NiO/SiO2 Junction Tri-Gate","authors":"Amirhossein Esteghamat;Zheng Hao;Mohammad Rezaei;Walid El Huni;Huseyin Cakmak;Gilberto Curatola;Samir Mouhoubi;Elison Matioli","doi":"10.1109/LED.2025.3584531","DOIUrl":"https://doi.org/10.1109/LED.2025.3584531","url":null,"abstract":"In this work, an E-mode multichannel HEMT is demonstrated based on p-type NiO/SiO2 as a gate stack to form a junction tri-gate structure. NiO provides a high hole concentration (<inline-formula> <tex-math>$approx ~10^{{19}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{-{3}}$ </tex-math></inline-formula>), resulting in an effective depletion of electrons in the multiple 2DEG channels under the gate. A thin SiO2 layer acts as a sacrificial layer, preventing damage to the fins during NiO deposition. As a result, E-mode operation can be achieved with 3x-larger tri-gate fins, compared to SiO2 alone, with <inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula> of 0.7 V (at <inline-formula> <tex-math>$1~mu $ </tex-math></inline-formula>A/mm), negligible threshold voltage hysteresis (<inline-formula> <tex-math>$Delta {V}_{text {th}}$ </tex-math></inline-formula> of 0.05 V), together with small on-resistance (<inline-formula> <tex-math>${R}_{text {ON}}$ </tex-math></inline-formula>) of 2.8 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2 for a gate-to-drain separation (<inline-formula> <tex-math>${L}_{text {GD}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>m. In addition, the devices showed exceptional off-state characteristics, including breakdown voltage (<inline-formula> <tex-math>${V}_{text {br}}$ </tex-math></inline-formula>) of 2.7 kV, and ON/OFF current ratio of <inline-formula> <tex-math>$10^{{9}}$ </tex-math></inline-formula>, showcasing the potential of the p-NiO/SiO2 gate stack for high-performance E-mode power devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1589-1592"},"PeriodicalIF":4.5,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0