A Gate-Assisted Dual-Functional GaN p-n Diode for High-Speed Visible Light Communication

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-28 DOI:10.1109/LED.2025.3565044

Muhammad Hunain Memon;Huabin Yu;Yang Kang;Zhichong Wang;Alireza Hosseini;Yuanmin Luo;Zhixiang Gao;Dongyang Luo;Haiding Sun

{"title":"A Gate-Assisted Dual-Functional GaN p-n Diode for High-Speed Visible Light Communication","authors":"Muhammad Hunain Memon;Huabin Yu;Yang Kang;Zhichong Wang;Alireza Hosseini;Yuanmin Luo;Zhixiang Gao;Dongyang Luo;Haiding Sun","doi":"10.1109/LED.2025.3565044","DOIUrl":null,"url":null,"abstract":"Multifunctional integration is emerging as a critical focus in optical communication research, especially for visible light communication (VLC) systems. A key challenge is developing diodes capable of efficient signal modulation and sensitive detection of superimposed optoelectrical signals, essential for advanced VLC applications. In this work, we integrated a metal-oxide gate terminal (Gt) onto a GaN-based blue diode, significantly improving both emission and detection functionalities. In emitter mode, this integrated approach achieves a 162% improvement in modulation bandwidth, increasing from 98 MHz with a conventional bias-tee to 257 MHz using the Gt configuration. Further, incorporating a reflective electrode with the Gt improves the device’s performance, increasing the light output power by 37% and external quantum efficiency by 34%, resulting in a data rate increase of 14.2%, from 0.89 to 1.03 Gbps. In detector mode, the diode effectively detects high-speed superimposed optoelectrical signals, facilitating secure and efficient communication. This multifunctional diode provides enhanced modulation and detection capabilities, offering a promising platform for next-generation VLC and optical communication systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 7","pages":"1163-1166"},"PeriodicalIF":4.1000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10979317/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Multifunctional integration is emerging as a critical focus in optical communication research, especially for visible light communication (VLC) systems. A key challenge is developing diodes capable of efficient signal modulation and sensitive detection of superimposed optoelectrical signals, essential for advanced VLC applications. In this work, we integrated a metal-oxide gate terminal (Gt) onto a GaN-based blue diode, significantly improving both emission and detection functionalities. In emitter mode, this integrated approach achieves a 162% improvement in modulation bandwidth, increasing from 98 MHz with a conventional bias-tee to 257 MHz using the Gt configuration. Further, incorporating a reflective electrode with the Gt improves the device’s performance, increasing the light output power by 37% and external quantum efficiency by 34%, resulting in a data rate increase of 14.2%, from 0.89 to 1.03 Gbps. In detector mode, the diode effectively detects high-speed superimposed optoelectrical signals, facilitating secure and efficient communication. This multifunctional diode provides enhanced modulation and detection capabilities, offering a promising platform for next-generation VLC and optical communication systems.

查看原文本刊更多论文

用于高速可见光通信的门辅助双功能GaN p-n二极管

多功能集成已成为光通信领域，特别是可见光通信领域的研究热点。一个关键的挑战是开发能够有效调制信号和敏感检测叠加光电信号的二极管，这对于先进的VLC应用至关重要。在这项工作中，我们将金属氧化物栅极终端（Gt）集成到gan基蓝色二极管上，显着提高了发射和检测功能。在发射器模式下，这种集成方法实现了162%的调制带宽改进，从使用传统偏置tee的98 MHz增加到使用Gt配置的257 MHz。此外，将反射电极与Gt结合可以提高器件的性能，将光输出功率提高37%，外部量子效率提高34%，从而使数据速率从0.89提高到1.03 Gbps，提高14.2%。在检测器模式下，二极管有效地检测高速叠加的光电信号，促进安全高效的通信。这种多功能二极管提供了增强的调制和检测能力，为下一代VLC和光通信系统提供了一个有前途的平台。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.