Comparison of Output Characteristics of Vanadium-Compensated 4H-SiC PCSS at 1064 nm and 355 nm

Abstract

This letter investigates the differences in output characteristics of planar 4H-SiC photoconductive semiconductor switches (PCSS) at 355 nm and 1064 nm. Microwave experiments in the range of 0-2 GHz were conducted to test the response time of the PCSS. The modulation depth of microwave triggered by 355 nm is found to be slightly inferior to that triggered by 1064 nm. The comparative analysis of carrier lifetime calculations and two-dimensional numerical simulations reveal that the disparity between electron and hole lifetimes significantly contributes to the distinct response time between 355 nm and 1064 nm Under a bias electric field of 20 kV/mm, the photoelectric conversion efficiency of the device triggered by 355 nm is 54 times that of the device triggered by 1064 nm, and the power capacity can reach 1.36 MW.