采用22nm FD-SOI技术的新型1t - apsu，具有创纪录的高可调灵敏度范围

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-24 DOI:10.1109/LED.2025.3563988

Hui Xie;Zehua Wang;Rongshan He;Haihua Wang;Jingya Cao;Peng Zhou;Xiao-Lan Tang;Yu-Long Jiang;Yong Xu;Jing Wan

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引用次数: 0

摘要

采用22 nm完全耗尽绝缘体上硅（FD-SOI）技术，实验证明了一种具有非凡可调灵敏度范围的新型单晶体管有源像素传感器（1T-APS）。该装置可以独立控制全井容量和灵敏度。两个电极连接到衬底上，一个用于形成埋藏氧化物（BOX）下的耗尽区，另一个用于调节光电子的运动。实验结果表明，灵敏度可调范围达到创纪录的340000%，从4 mV/($\mu $ J/cm ${}^{{2}}\text{)}$到13.6 V/($\mu $ J/cm ${}^{{2}}\text{)}$。具有可调的灵敏度，动态范围（DR）从51.5 dB扩展到101.5 dB，使其有望用于高动态范围成像应用。

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A Novel 1T-APSUsing 22nm FD-SOI Technology With Record High Tunable Sensitivity Range

A novel one transistor active pixel sensor (1T-APS) with extraordinary tunable sensitivity range is experimentally demonstrated using 22 nm fully depleted silicon-on-insulator (FD-SOI) technology. The proposed device enables independent control of both full well capacity and sensitivity. Two electrodes are connected to the substrate, with one used to form the depletion region beneath the buried oxide (BOX) and the other to tune the movement of photoelectrons. The experimental results show a record high tunable sensitivity range of 340000%, varying from 4 mV/(

$\mu $

J/cm

${}^{{2}}\text {)}$

to 13.6 V/(

$\mu $

J/cm

${}^{{2}}\text {)}$

. With tunable sensitivity, the dynamic range (DR) is expanded from 51.5 dB to 101.5 dB, making it promising for high-dynamic-range imaging applications.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.