Modular HfOx-RRAM for On-Demand Micromodular Electronics

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-28 DOI:10.1109/LED.2025.3564850

Siddharth Kurup;Swagat Bhattacharya;Rebecca K. Banner;Kaifan Yue;Praveen Raj Ayyappan;Daniel Aziz;Hubert N. Elly;Kira L. Barton;Jennifer Hasler;Michael A. Filler;Eric M. Vogel

引用次数: 0

Abstract

Micromodular metal-HfOx-metal resistive random-access memories (RRAM) were fabricated, transferred to foreign substrates, and contacted using high-resolution electrohydrodynamic jet (e-jet) printing. The modular RRAM exhibited bipolar switching at low operating voltages and multi-level analog resistance states programmable using variable amplitude voltage pulses. These variable resistance RRAMs were also integrated with an amplifier and a bandpass filter to modulate their gain and corner frequencies. This work enables integration of high-quality RRAM devices in modular circuits and paves the way for microscale heterogeneous integration at the device level.

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模块化HfOx-RRAM按需微模块电子

制备了微模块金属- hfox -金属电阻随机存取存储器（RRAM），并将其转移到外部衬底上，并使用高分辨率电流体动力喷射（e-jet）打印进行接触。模块化RRAM在低工作电压下表现出双极开关和多级模拟电阻状态，使用可变振幅电压脉冲可编程。这些可变电阻rram还与放大器和带通滤波器集成，以调制其增益和角频率。这项工作能够在模块化电路中集成高质量的RRAM器件，并为器件级的微尺度异构集成铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.