IEEE Electron Device Letters最新文献_第7页

In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition With High Field-Effect Mobility

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-22 DOI: 10.1109/LED.2025.3532673

Ziheng Wang;Jinxiu Zhao;Kai Jiang;Yuan Li;Zhenyu Chen;Chen Wang;Guangzheng Yi;Kunlin Cai;Zhiyu Lin;Liankai Zheng;Tianning Cui;Xiuyan Li;Xueli Ma;Guilei Wang;Chao Zhao;Arokia Nathan;Jun Yu;Mengwei Si

{"title":"In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition With High Field-Effect Mobility","authors":"Ziheng Wang;Jinxiu Zhao;Kai Jiang;Yuan Li;Zhenyu Chen;Chen Wang;Guangzheng Yi;Kunlin Cai;Zhiyu Lin;Liankai Zheng;Tianning Cui;Xiuyan Li;Xueli Ma;Guilei Wang;Chao Zhao;Arokia Nathan;Jun Yu;Mengwei Si","doi":"10.1109/LED.2025.3532673","DOIUrl":"https://doi.org/10.1109/LED.2025.3532673","url":null,"abstract":"In this work, we demonstrate high-performance atomic-layer-deposited indium-zinc oxide (IZO) transistors by introducing In2O3-ZnO superlattice, achieving high field-effect mobility (<inline-formula> <tex-math>$mu _{text {FE}}text {)}$ </tex-math></inline-formula>. The electrical properties, such as carrier density and mobility, can be further tuned by the thickness of In2O3 and ZnO layers beyond material composition. The crystallinity of In2O3-ZnO superlattice channel can also be improved by the design of In2O3 and ZnO multilayer. Therefore, an enhanced <inline-formula> <tex-math>$mu _{text {FE}}$ </tex-math></inline-formula> is achieved together with high on/off ratio and steep subthreshold slope (SS). Besides, devices with channel length down to 80 nm are fabricated, with CF4 plasma treatment utilized to suppress carrier density, achieving high on-current, steep SS and enhancement-mode operation. The In2O3–ZnO superlattice enables a new approach to effectively engineer the material properties of oxide semiconductors for further performance enhancement beyond conventional material composition engineering.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"412-415"},"PeriodicalIF":4.1,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Low Detection Limit and High Sensitivity Three-Dimensional Structured X-Ray Detector

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-22 DOI: 10.1109/LED.2025.3532677

Ruiliang Xu;Xiaochuan Xia;Zhongyuan Han;Deyu Wang;Guanbing Ji;Hongyun Wang;Xingzhu Cui;Yang Liu;Xin Shi;Wei Jiang;Ruirui Fan;Hongwei Liang

{"title":"A Low Detection Limit and High Sensitivity Three-Dimensional Structured X-Ray Detector","authors":"Ruiliang Xu;Xiaochuan Xia;Zhongyuan Han;Deyu Wang;Guanbing Ji;Hongyun Wang;Xingzhu Cui;Yang Liu;Xin Shi;Wei Jiang;Ruirui Fan;Hongwei Liang","doi":"10.1109/LED.2025.3532677","DOIUrl":"https://doi.org/10.1109/LED.2025.3532677","url":null,"abstract":"A novel and highly sensitive X-ray detector with three-dimensional structured electrodes (3D-SiC) has been prepared on a high-resistivity silicon carbide substrate. The detector consistently demonstrates a low leakage current of 7.1 pA and 280 pA with the bias of 200 V at room temperature and 150°C, respectively. In the X-ray response test, the 3D-SiC detector exhibits high sensitivity of <inline-formula> <tex-math>${5}.{65}times {10} ^{{4}}~mu $ </tex-math></inline-formula>C<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> Gy<inline-formula> <tex-math>$_{text {air}}^{-{1}}cdot $ </tex-math></inline-formula>cm<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>. Meanwhile, it exhibits a linear response to dose rates ranging from 0.67 to <inline-formula> <tex-math>$3.02~mu $ </tex-math></inline-formula>Gy<inline-formula> <tex-math>$_{text {air}}cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>. So, the detection limit could be calculated as low as 6.92 nGy<inline-formula> <tex-math>$_{text {air}}cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>. Comparing with planar semiconductor-based X-ray detectors, 3D-SiC detector shows ultra-high sensitivity with extremely low detection limit at room temperature. This characteristic renders it potentially advantageous in domains characterized by limited X-ray detection and imaging capabilities, such as the field of X-ray medical diagnosis.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"345-348"},"PeriodicalIF":4.1,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Quantum Dot Light-Emitting Diodes With Self-Assembled Bilayer Light Extraction Structure

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531377

Leilei Cui;Chao Zhong;Hailong Hu;Tailiang Guo;Fushan Li

引用次数: 0

Effects of Carbon Lateral Implantation in Ge-rich GeSbTe Phase-Change Memory

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531547

C. De Camaret;G. Bourgeois;R. Antonelli;F. Mazen;M. Coig;F. Milesi;M. Bernard;V. Meli;S. Martin;N. Castellani;F. Andrieu;G. Navarro

引用次数: 0

1T Process-Compatible Active Pixel Sensor With Enhanced Light Intensity Response Range

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531434

Hang Xu;Jianbin Guo;Tianyang Feng;Peng Liao;Yafen Yang;Qingqing Sun;David Wei Zhang

{"title":"1T Process-Compatible Active Pixel Sensor With Enhanced Light Intensity Response Range","authors":"Hang Xu;Jianbin Guo;Tianyang Feng;Peng Liao;Yafen Yang;Qingqing Sun;David Wei Zhang","doi":"10.1109/LED.2025.3531434","DOIUrl":"https://doi.org/10.1109/LED.2025.3531434","url":null,"abstract":"In this work, we present a novel one-transistor active pixel sensor with enhanced strong light response based on a semi-floating gate (SFG) transistor. The proposed device employs a metal-oxide-semiconductor (MOS) capacitor to store photo-generated holes from backside illumination, resulting in a larger full well capacity and improved light absorption characteristics. Our results demonstrate that the device exhibits an exceptionally wide light intensity response range, from <inline-formula> <tex-math>${1}.{0}times {10} ^{-{6}}$ </tex-math></inline-formula> mW/cm2 to <inline-formula> <tex-math>${1}.{0}times {10} ^{{2}}$ </tex-math></inline-formula> mW/cm2, achieving a substantial readout current difference exceeding <inline-formula> <tex-math>$0.1~mu $ </tex-math></inline-formula>A. Furthermore, the low light response can be enhanced by more than 8 times by adjusting the operating voltage. Under standard 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m node, the fill factor is also improved by 30% without increase in cost and tenfold reduction is achieved in power consumption simultaneously.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"448-451"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TCAD Modeling of ESD Diode Overshoot During Ultrafast TLP Events

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531797

Emanuele Groppo;Harald Gossner;Ralf Brederlow

引用次数: 0

Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3532255

Zefu Zhao;Kai-Jhih Gan;Shenglin Pan;Shaohao Wang;Tiaoyang Li;Dun-Bao Ruan

{"title":"Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer","authors":"Zefu Zhao;Kai-Jhih Gan;Shenglin Pan;Shaohao Wang;Tiaoyang Li;Dun-Bao Ruan","doi":"10.1109/LED.2025.3532255","DOIUrl":"https://doi.org/10.1109/LED.2025.3532255","url":null,"abstract":"This work demonstrates a low thermal budget amorphous InWO (<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-IWO) thin film transistor (TFT) achieving a subthreshold swing (S.S.) of 40 mV/decade without utilizing a ferroelectric gate oxide. The oxygen vacancies in <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-IWO induce the formation of an interfacial dipole layer at the surface between <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-IWO and SiO2/HfO2. The TFT with dipole-rich interface exhibits the S.S. value below 60 mV/decade over 2 decades of drain current. X-ray diffraction (XRD) confirmed the absence of the ferroelectric orthorhombic phase in the HfO2 layer. Besides, the low thermal budget <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>-IWO TFT also exhibits a high field effect mobility of 97 cm2/V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>s and a large on/off current ratio of 1.8E6, while the process temperature is as low as <inline-formula> <tex-math>$300~^{circ }$ </tex-math></inline-formula>C.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"436-439"},"PeriodicalIF":4.1,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of a Cusp Gun With Two Control Electrodes Biased at Different Voltages

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531894

Bo Li;Junqiang Gao;Guoxiang Shu;Huabi Yin;Wenlong He

引用次数: 0

Fast Switching of 4H-SiC Light Triggered Thyristor by Photoconductive Assistance

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI: 10.1109/LED.2025.3531368

Xi Wang;Yuxi Wan;Xuan Ji;Yulei Zhang;Hongbin Pu;Qi Wang;Zhiming Chen

引用次数: 0

First Demonstration of Deeply Scaled 2T0C DRAM With Record Data Retention and Fast Write Speed