IEEE Electron Device Letters最新文献_第7页

Dynamic Extension Behavior of the Depletion Region in GaN HEMTs Monitored With a Channel-Probe Branch Structure 用通道-探针分支结构监测GaN hemt耗尽区的动态扩展行为

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI: 10.1109/LED.2024.3485639

Xin Wang;Jinyan Wang;Bin Zhang;Chen Wang;Ziheng Liu;Jiayin He;Ju Gao;Hongyue Wang;Jin Wei;Maojun Wang

{"title":"Dynamic Extension Behavior of the Depletion Region in GaN HEMTs Monitored With a Channel-Probe Branch Structure","authors":"Xin Wang;Jinyan Wang;Bin Zhang;Chen Wang;Ziheng Liu;Jiayin He;Ju Gao;Hongyue Wang;Jin Wei;Maojun Wang","doi":"10.1109/LED.2024.3485639","DOIUrl":"https://doi.org/10.1109/LED.2024.3485639","url":null,"abstract":"This letter proposes a method to monitor the dynamic extension process of the depletion region in GaN HEMTs. Based on a channel-probe branch structure, the transient channel potential (\u0000<inline-formula> <tex-math>$text {V}_{text {CP}}$ </tex-math></inline-formula>\u0000) at a certain distance from the gate was measured under off-state conditions. From the transient \u0000<inline-formula> <tex-math>$text {V}_{text {CP}}$ </tex-math></inline-formula>\u0000 curves, the extension time of the depletion region was directly obtained for the first time, and it was found to exhibit an exponential dependence on the drain-gate bias (\u0000<inline-formula> <tex-math>$text {V}_{text {DG}}$ </tex-math></inline-formula>\u0000) under off-state conditions. Comparison study of devices with and without \u0000<inline-formula> <tex-math>$text {SiN}_{text {x}}$ </tex-math></inline-formula>\u0000 passivation reveals the dominant role of surface traps in the extension process. The equivalent surface charging current is derived from the extension time of the depletion region, with which the dominated surface charge transport mechanism is revealed to be Poole-Frenkel emission.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2295-2298"},"PeriodicalIF":4.1,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gate Length Dependence of Bias Temperature Instabilities up to 400 °C in 4H-SiC CMOS Devices 4H-SiC CMOS器件中高达400°C的偏置温度不稳定性的栅极长度依赖性

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI: 10.1109/LED.2024.3485631

Zewei Dong;Yun Bai;Leshan Qiu;Chengyue Yang;Jilong Hao;Yidan Tang;Xuan Li;Xiaoli Tian;Xinyu Liu

引用次数: 0

P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond 掺磷n型金刚石的p沟道mosfet

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI: 10.1109/LED.2024.3485683

Wen Zhao;Satoshi Koizumi;Meiyong Liao

引用次数: 0

A Compact Writing Scheme for the Reliability Challenges in 1T Multi-Level FeFET Array: Variation, Endurance, and Write Disturb 应对 1T 多层 FeFET 阵列可靠性挑战的紧凑型写入方案：变化、耐久性和写入干扰

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI: 10.1109/LED.2024.3485803

Yuejia Zhou;Hanyong Shao;Weiqin Huang;Runteng Zhu;Yihan Zhang;Ru Huang;Kechao Tang

引用次数: 0

Quantum Cutting Photovoltaic Conversion Film Doped With Zinc and Ytterbium for Silicon Solar Cells 掺杂锌镱的硅太阳能电池量子切割光伏转换膜

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI: 10.1109/LED.2024.3485905

Tianyu Xie;Wei Li;Yuqi Wang;Ruixin Song;Yue Wang;Wen Xu;Donglei Zhou;Hongwei Song

{"title":"Quantum Cutting Photovoltaic Conversion Film Doped With Zinc and Ytterbium for Silicon Solar Cells","authors":"Tianyu Xie;Wei Li;Yuqi Wang;Ruixin Song;Yue Wang;Wen Xu;Donglei Zhou;Hongwei Song","doi":"10.1109/LED.2024.3485905","DOIUrl":"https://doi.org/10.1109/LED.2024.3485905","url":null,"abstract":"Currently, silicon solar cells (SSCs) have been the most widely used photovoltaic devices all around the world. However, the fundamental studies about SSCs are moving slowly as one of the key obstacles is the limited response to ultraviolet (UV) light. Here, we use the Yb\u0000<inline-formula> <tex-math>$^{{3}+}$ </tex-math></inline-formula>\u0000 doped perovskite quantum dots (PeQDs) with highly efficient quantum cutting emission to enhance the UV response of SSCs. Zn\u0000<inline-formula> <tex-math>$^{{2}+}$ </tex-math></inline-formula>\u0000 ions are co-doped to increase the exciton binding energy, decrease the defect density and improve the tolerance factor of PeQDs. Experimental and theoretical results show that Zn\u0000<inline-formula> <tex-math>$^{{2}+}$ </tex-math></inline-formula>\u0000, Yb\u0000<inline-formula> <tex-math>$^{{3}+}$ </tex-math></inline-formula>\u0000 co-doped CsPbCl3 PeQDs are successfully synthesized with a photoluminescence quantum yield (PLQY) of 182.4%. By integrating PeQDs film with SSCs, the spectral response in the range of \u0000<inline-formula> <tex-math>$200sim 400$ </tex-math></inline-formula>\u0000 nm is largely enhanced. Importantly, the maximum photovoltaic conversion efficiency (PCE) of SSCs is increased from 18.6% to 21.2%. This study proposes a more cost-effective, convenient, and effective method for improving the PCE of SSCs, which is in line with the current industry’s application requirements and urgent problems to be solved.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2471-2474"},"PeriodicalIF":4.1,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization 基于绿色激光结晶的高可靠性HfO2/ZrO2超晶格铁电多晶硅FinFET存储器件

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI: 10.1109/LED.2024.3485900

Chen-You Wei;Yung-Teng Fang;Yi-Ju Yao;Chih-Chao Yang;Fu-Ju Hou;Chien-Chun Chen;Yung-Hsien Wu;Yung-Chun Wu

引用次数: 0

Interface Engineering on Ferroelectricity of Transparent Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitors 界面工程对透明 Hf₀.₅Zr₀.₅O₂ 铁电电容器铁电性的影响

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-23 DOI: 10.1109/LED.2024.3485077

Shuning Zhang;Fansen Cao;Haoyu Lu;Yingfen Wei;Xuanyu Zhao;Hao Jiang;Xiaobing Yan;Qi Liu

引用次数: 0

Simultaneous Calibration of Axial and Lateral Radiation Forces of Ultra-High Frequency Ultrasound Acting on a Microrobot With Arbitrary Geometry 超高频超声作用于任意几何形状微型机器人的轴向和侧向辐射力的同步标定

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-21 DOI: 10.1109/LED.2024.3483907

Jinzhe Wu;Jialin Shi;Zhaoxi Li;Peng Yu;Huiyao Shi;Si Tang;Shanshan Chen;Chunlong Fei;Chanmin Su;Lianqing Liu

{"title":"Simultaneous Calibration of Axial and Lateral Radiation Forces of Ultra-High Frequency Ultrasound Acting on a Microrobot With Arbitrary Geometry","authors":"Jinzhe Wu;Jialin Shi;Zhaoxi Li;Peng Yu;Huiyao Shi;Si Tang;Shanshan Chen;Chunlong Fei;Chanmin Su;Lianqing Liu","doi":"10.1109/LED.2024.3483907","DOIUrl":"https://doi.org/10.1109/LED.2024.3483907","url":null,"abstract":"Acoustically actuated microrobots have attracted considerable attention, which have developed various geometries. These microrobots are powered through their interaction with acoustics. The use of ultrahigh-frequency (UHF) ultrasound yields a focus on the order of several microns, thus actuating microrobots with accurate, strong, and two-directional forces. However, to date no technique can simultaneously calibrate the actual axial and lateral radiation forces of UHF ultrasound above 60 MHz acting on a microrobot with arbitrary geometry. To address this issue, we present a force sensor based on a micropipette. The force sensor consists of the micropipette, microrobot with a marker, and fixed base, which calibrates the overall spring constants. By combining the two-directional displacements actuated by the axial and lateral radiation forces, we calibrated the forces with a resolution of hundreds of piconewtons. We calibrated the axial and lateral radiation forces on cylindrical and spherical microrobots with the same volume and further investigated the influences of the duty factor and excitation voltage. This method complements a crucial design link in UHF ultrasound actuating microrobots.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2534-2537"},"PeriodicalIF":4.1,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental Results of the Novel 1.5-MW-Class 140-GHz Continuous-Wave Gyrotron for the Wendelstein 7-X Stellarator Wendelstein 7-X仿星器新型1.5 mw级140 ghz连续波回旋管实验结果

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-21 DOI: 10.1109/LED.2024.3484218

S. Ponomarenko;H. P. Laqua;K. A. Avramidis;G. Gantenbein;J. Gontard;F. Hollmann;S. Illy;Z. C. Ioannidis;J. Jelonnek;J. Jin;S. Kohler;L. Krier;A. Leggieri;F. Legrand;G. Lietaer;C. Lievin;S. Marsen;D. Moseev;F. Noke;T. Rzesnicki;T. Stange;M. Thumm;R. C. Wolf

{"title":"Experimental Results of the Novel 1.5-MW-Class 140-GHz Continuous-Wave Gyrotron for the Wendelstein 7-X Stellarator","authors":"S. Ponomarenko;H. P. Laqua;K. A. Avramidis;G. Gantenbein;J. Gontard;F. Hollmann;S. Illy;Z. C. Ioannidis;J. Jelonnek;J. Jin;S. Kohler;L. Krier;A. Leggieri;F. Legrand;G. Lietaer;C. Lievin;S. Marsen;D. Moseev;F. Noke;T. Rzesnicki;T. Stange;M. Thumm;R. C. Wolf","doi":"10.1109/LED.2024.3484218","DOIUrl":"https://doi.org/10.1109/LED.2024.3484218","url":null,"abstract":"In this work, we present the achievements obtained during the commissioning phase of the newly developed 140-GHz continuous-wave tube TH1507U at the gyrotron test stand of the electron-cyclotron resonance heating facility of the Wendelstein 7-X stellarator. The gyrotron is based on the successful 1-MW class industrial TH1507 gyrotron, which operates in the TE\u0000<inline-formula> <tex-math>$_{{28},{8}}$ </tex-math></inline-formula>\u0000 mode, and has been optimized for operation in the higher-order TE\u0000<inline-formula> <tex-math>$_{{28},{10}}$ </tex-math></inline-formula>\u0000 mode. The 1-ms short-pulse tests confirmed the nominal output power of 1.5 MW. In a long-pulse operating regime, an output power of 1.3 MW with total efficiency 45.9% was demonstrated at pulse lengths of 3 minutes. Different regimes where the beam current is above 50 A demonstrated a saturation of output power at 1.3 MW, that can be explained by the presence of parasitic modes. A parasite-free operation with an output power of 1.2 MW was achieved with pulses up to 580 s in length. The pulse length was limited due to the existing capabilities of the cooling system at the test stand, and is foreseen to be extended in the future.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2550-2553"},"PeriodicalIF":4.1,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10723780","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Generic Signal Shielding Technique for MEMS Resonators in Conductive Liquid 导电液体中MEMS谐振器的通用信号屏蔽技术

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2024-10-21 DOI: 10.1109/LED.2024.3483972

Zhong-Wei Lin;Sheng-Shian Li

{"title":"A Generic Signal Shielding Technique for MEMS Resonators in Conductive Liquid","authors":"Zhong-Wei Lin;Sheng-Shian Li","doi":"10.1109/LED.2024.3483972","DOIUrl":"https://doi.org/10.1109/LED.2024.3483972","url":null,"abstract":"The challenges of operating Micro-Electro-Mechanical Systems (MEMS) resonators in conductive liquid medium were addressed in this study, which is crucial for applications in biomedical sensing, chemical analysis, and environmental monitoring. High ionic conductivity has been encountered by traditional approaches, leading to substantial feedthrough interference that conceals resonant signals. We introduce a novel shielded signal pad/interconnect configuration to overcome these limitations. By driving/sensing the resonator through the shielded pad/interconnect and grounding the exposed ones, feedthrough effects were reduced, and resonance readability was enhanced across a much broader frequency spectrum compared to previous method. Improved performance of AlN-based MEMS resonators in liquid medium was demonstrated through experimental results, with phase noise performance in ionic environments of −22.17 dBc/Hz at 10 Hz offset and −99.45 dBc/Hz at 10 kHz offset. A mass resolution of 3.3 pg in ionic liquids is achieved by the resonator/oscillator, proving its applicability for real-time sensing. These findings offer a robust solution for maintaining MEMS resonator/oscillator functionality in conductive liquid and pave the way for future advancements.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2538-2541"},"PeriodicalIF":4.1,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0