IEEE Electron Device Letters最新文献_第7页

Ultrahigh Frequency SAW Devices Based on 128°Y-X LiNbO₃/SiO₂/Sapphire Structure 基于128°Y-X LiNbO₃/SiO₂/蓝宝石结构的超高频SAW器件

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-07 DOI: 10.1109/LED.2025.3586647

Jiajun Gao;Sulei Fu;Huiping Xu;Peisen Liu;Boyuan Xiao;Xinchen Zhou;Rui Wang;Donghui Zhang;Feng Pan;Cheng Song

{"title":"Ultrahigh Frequency SAW Devices Based on 128°Y-X LiNbO₃/SiO₂/Sapphire Structure","authors":"Jiajun Gao;Sulei Fu;Huiping Xu;Peisen Liu;Boyuan Xiao;Xinchen Zhou;Rui Wang;Donghui Zhang;Feng Pan;Cheng Song","doi":"10.1109/LED.2025.3586647","DOIUrl":"https://doi.org/10.1109/LED.2025.3586647","url":null,"abstract":"Surface acoustic wave (SAW) devices based on multilayer structures herald dawns in satisfying stringent high-frequency demands of 5G and sub-6G wireless systems. However, SAW devices for X-band via lithography have not been realized. This work targets at boosting the operating frequency of SAW devices to the X-band simply by standard photolithography and lift-off techniques. Based on 128°Y-X LiNbO3 (LN)/SiO2/Sapphire heterostructure, a high-order thickness shear (TS) SAW as the intended mode is successfully excited. Theoretical and experimental optimization of LN cut orientation, LN and SiO2 thickness, and wavelength (<inline-formula> <tex-math>$lambda text {)}$ </tex-math></inline-formula> enable the resonators and filters to cover most partial X-band. The resonators achieve an ultrahigh center frequency (<inline-formula> <tex-math>${f}_{text {c}}text {)}$ </tex-math></inline-formula> of 10.53 GHz, with a large coupling coefficient (<inline-formula> <tex-math>${K}^{{2}}text {)}$ </tex-math></inline-formula> of 11.05% and Bode-<inline-formula> <tex-math>${Q}_{max }$ </tex-math></inline-formula> of 372. The corresponding filters covering 8.9–10.3 GHz exhibit a minimum insertion loss (<inline-formula> <tex-math>${mathrm {IL}}_{min }text {)}$ </tex-math></inline-formula> of 3.06–3.31 dB. This first prototype of X-band SAW devices fabricated via standard lithography highlights enormous potential of SAW technology for next-generation wireless systems.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1640-1643"},"PeriodicalIF":4.5,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2.4 kV β-Ga2O3 SBDs With 1.22 GW/cm2 Figure of Merit by N2O Plasma Treatment N2O等离子体处理的2.4 kV β-Ga2O3 sbd性能图为1.22 GW/cm2

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-04 DOI: 10.1109/LED.2025.3585723

Yongjie He;Maolin Pan;Jining Yang;Wenjun Liu;Hao Zhu

{"title":"2.4 kV β-Ga2O3 SBDs With 1.22 GW/cm2 Figure of Merit by N2O Plasma Treatment","authors":"Yongjie He;Maolin Pan;Jining Yang;Wenjun Liu;Hao Zhu","doi":"10.1109/LED.2025.3585723","DOIUrl":"https://doi.org/10.1109/LED.2025.3585723","url":null,"abstract":"This work reports the effect of N2O plasma treatment at different temperatures on the performance of <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 Schottky barrier diodes (SBDs). The results show that after <inline-formula> <tex-math>$300~^{circ }$ </tex-math></inline-formula>C N2O plasma treatment, the device leakage current decreased from <inline-formula> <tex-math>$4times 10^{-{9}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$4times 10^{-{10}}$ </tex-math></inline-formula> A/cm2, and the on-off ratio increased from <inline-formula> <tex-math>$6times 10^{{10}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$5times 10^{{11}}$ </tex-math></inline-formula>. Due to the passivation of surface states and oxygen vacancies by nitrogen and oxygen ions, the carrier concentration decreased from <inline-formula> <tex-math>${2}.{20}times {10} ^{{16}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>${1}.{61}times {10} ^{{16}}$ </tex-math></inline-formula>cm<inline-formula> <tex-math>${}^{-{3}}$ </tex-math></inline-formula>. The improvement is attributed to the formation of a significant amount of Ga-N bonds on the sample surface, which results in the generation of a high-resistance N-doped <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 layer. This further improves the device breakdown voltage (V<inline-formula> <tex-math>${}_{text {br}}text {)}$ </tex-math></inline-formula> from 664 V to 2,437 V with a power figure of merit (PFOM) of 1.22 GW/cm2. Our breakdown electric field (E<inline-formula> <tex-math>${}_{text {br}}text {)}$ </tex-math></inline-formula> is the highest among reported vertical <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 SBDs without termination structure, and Vbr is the highest of devices with the same epitaxy thickness.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1577-1580"},"PeriodicalIF":4.5,"publicationDate":"2025-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144916316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene Metasurface Absorber for Traveling Wave Tube Backward Wave Oscillation Suppression 抑制行波管后向波振荡的石墨烯超表面吸收剂

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-04 DOI: 10.1109/LED.2025.3585514

Pan Wang;Wenlong Han;Liuzhen Peng;Canran Zhang;Qilong Wang

引用次数: 0

p-GaN Gated HEMT With 770 ION/IOFF Ratio Operating at 800 °C p-GaN门控HEMT具有770离子/IOFF比，工作在800°C

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-03 DOI: 10.1109/LED.2025.3585816

Ajay Kumar Visvkarma;Juan Nicolas Jimenez Gaona;Chan-Wen Chiu;Yixin Xiong;Yi-Shuo Huang;Rian Guan;Nathan S. Banner;Suzanne E. Mohney;Rongming Chu

引用次数: 0

XBAR-Structured Magnetoelectric Antenna With Magnetostrictive Interdigital Transducers 带磁致伸缩数字间换能器的xbar结构磁电天线

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-03 DOI: 10.1109/LED.2025.3585497

Yifan Fu;Rui Hu;Junru Li;Du Li;Yinuo Song;Bin Fang;Wenkui Lin;Zhongming Zeng;Xiangwei Zhu

引用次数: 0

Enhancement Mode N-Polar Deep Recess GaN HEMT With Record Small Signal Performance 具有创纪录小信号性能的n极深凹槽GaN HEMT增强模式

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-03 DOI: 10.1109/LED.2025.3585597

Oguz Odabasi;Md. Irfan Khan;Xin Zhai;Harsh Rana;Elaheh Ahmadi

引用次数: 0

Impact of Al-Doping on Ferroelectricity and Reliability of HfZrO Film Under High Temperature Annealing al掺杂对高温退火下HfZrO薄膜铁电性和可靠性的影响

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-02 DOI: 10.1109/LED.2025.3585154

Seonggeun Kim;Seungwon Go;Sihyun Kim;Sangwan Kim

{"title":"Impact of Al-Doping on Ferroelectricity and Reliability of HfZrO Film Under High Temperature Annealing","authors":"Seonggeun Kim;Seungwon Go;Sihyun Kim;Sangwan Kim","doi":"10.1109/LED.2025.3585154","DOIUrl":"https://doi.org/10.1109/LED.2025.3585154","url":null,"abstract":"This study explores the influences of Al-doping on a ferroelectricity and a reliability of Hf<inline-formula> <tex-math>${}_{{0}.{5}}$ </tex-math></inline-formula>Zr<inline-formula> <tex-math>${}_{{0}.{5}}$ </tex-math></inline-formula>O2 (HZO) films with a high temperature annealing. The Al-doped HZO (Al:HZO) films, in which the Al2O3 (AlO) layers are uniformly doped into the HZO films, are fabricated by using the super-cycles of atomic layer deposition (ALD). All the Al:HZO films show the reduced leakage current, increased breakdown field, 10-year lifetime voltage (> 2.32 V), endurance (> <inline-formula> <tex-math>$10^{{10}}$ </tex-math></inline-formula> cycles) without observable fatigue and wake-up effect. Among the Al:HZO films, the 72:1 cycle ratio (CR) exhibits the highest remanent polarization (<inline-formula> <tex-math>${P}_{text {r}}text {)}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$boldsymbol {sim } 22.7~boldsymbol {mu }$ </tex-math></inline-formula>C/cm2, while the 36:1 CR offered an optimal trade-off between reliability and <inline-formula> <tex-math>${P}_{text {r}}$ </tex-math></inline-formula> (<inline-formula> <tex-math>$boldsymbol {sim } 19.1~boldsymbol {mu }$ </tex-math></inline-formula>C/cm<inline-formula> <tex-math>${}^{{2}}text {)}$ </tex-math></inline-formula>. These results suggest that the Al:HZO films are promising candidates for the next-generation 3D ferroelectric memory applications requiring high thermal budget compatibility and robust reliability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1648-1651"},"PeriodicalIF":4.5,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices TaOX ReRAM器件中的双层欧姆电极工程

IF 4.5 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-02 DOI: 10.1109/LED.2025.3585469

Godwin Paul;Tom Glint;Stephan Menzel;Vikas Rana

{"title":"Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices","authors":"Godwin Paul;Tom Glint;Stephan Menzel;Vikas Rana","doi":"10.1109/LED.2025.3585469","DOIUrl":"https://doi.org/10.1109/LED.2025.3585469","url":null,"abstract":"<inline-formula> <tex-math>$text {TaO}_{text {X}}$ </tex-math></inline-formula>Redox-based Random Access Memory (ReRAM) is a strong candidate to replace existing memory technologies, offering low power consumption, high endurance, and long retention. However, reducing switching energy and enhancing switching uniformity are critical for practical applications. Previous efforts to improve switching uniformity have compromised device performance, leading to low On/Off ratio or high operating voltages. In this work, <inline-formula> <tex-math>$text {TaO}_{text {X}}$ </tex-math></inline-formula> ReRAM is engineered with bilayer ohmic electrodes (OE) and the switching mechanism for specific OE thicknesses is explored based on the switching behavior and material properties of OE. An optimized Ti(2 nm)/Ta(13 nm) bilayer OE ReRAM is presented with a reduced forming voltage, <inline-formula> <tex-math>$sim 11times $ </tex-math></inline-formula> (<inline-formula> <tex-math>$sim 6times $ </tex-math></inline-formula>) faster mean SET (RESET) switching speeds, <inline-formula> <tex-math>$sim 6times $ </tex-math></inline-formula> lower mean switching energy and <inline-formula> <tex-math>$sim 10times $ </tex-math></inline-formula> lower resistance drift during long switching cycles compared to its single-layer OE counterpart, without degradation in other device performance metrics.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 9","pages":"1537-1540"},"PeriodicalIF":4.5,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11063316","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144918387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577888

引用次数: 0

IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-07-01 DOI: 10.1109/LED.2025.3577880

引用次数: 0