IEEE Electron Device Letters最新文献_第7页

Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29 宣布IEEE/Optica出版集团光波技术杂志特刊：OFS-29

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540244

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IEEE Transactions on Electron Devices Table of Contents IEEE电子器件汇刊目录

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540238

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IEEE Electron Device Letters Information for Authors IEEE电子器件通讯作者信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540236

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Enhanced Photoelectric Performance of β-Ga₂O₃ Phototransistors via NH₃ Plasma Pretreatment for Ultra-Sensitive Solar-Blind UV Detection NH₃等离子体预处理提高β-Ga₂O₃光电晶体管的光电性能用于超灵敏的太阳盲紫外探测

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3545485

Shuqi Huang;Xiaoxi Li;Xiaole Jia;Zhifan Wu;Yuan Fang;Yu Wang;Yang Zhou;Cizhe Fang;Xiangyu Zeng;Yibo Wang;Yan Liu;Yue Hao;Genquan Han

{"title":"Enhanced Photoelectric Performance of β-Ga₂O₃ Phototransistors via NH₃ Plasma Pretreatment for Ultra-Sensitive Solar-Blind UV Detection","authors":"Shuqi Huang;Xiaoxi Li;Xiaole Jia;Zhifan Wu;Yuan Fang;Yu Wang;Yang Zhou;Cizhe Fang;Xiangyu Zeng;Yibo Wang;Yan Liu;Yue Hao;Genquan Han","doi":"10.1109/LED.2025.3545485","DOIUrl":"https://doi.org/10.1109/LED.2025.3545485","url":null,"abstract":"This work presents <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 phototransistors with exceptional photoelectric performance, enhanced by NH3 plasma pretreatment prior to Al2O3 dielectric deposition. The devices achieve a remarkable responsivity (<inline-formula> <tex-math>${R}text {)}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$1.3 times 10^{{6}}$ </tex-math></inline-formula> A/W and a record-high detectivity (<inline-formula> <tex-math>${D}^{ast } text {)}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$2.8 times 10^{{19}}$ </tex-math></inline-formula> Jones under 254 nm ultraviolet (UV) light. Rapid photoresponse is demonstrated, with a rise time (<inline-formula> <tex-math>$tau _{text {r}}text {)}$ </tex-math></inline-formula> of 90 ms and a decay time (<inline-formula> <tex-math>$tau _{text {d}}text {)}$ </tex-math></inline-formula> of 1 ms under a 1 Hz pulsed UV light source. These superior characteristics are attributed to NH3 plasma-induced improvements at the Al2O3/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 interface, including reduced trap density and enhanced dielectric adhesion. The findings provide a promising pathway to advance <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 phototransistors for ultra-sensitive, solar-blind UV detection with rapid response capabilities.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"797-800"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Electron Device Letters Publication Information IEEE电子器件通讯出版信息

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540230

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Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540240

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Corrections to “A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature” 对“室温下超窄线宽隧穿发光装置”的修正

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3537721

Yuanpeng Wu;Yixin Xiao;Kai Sun;Jianyang Xiao;Bowen Tian;Ding Wang;Danhao Wang;Kelotchi S Figueroa;Alexander McFarland;Parag B. Deotare;Zetian Mi

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ML-Driven Compact Models for RRAMs: Addressing Variability and Simulation Efficiency 机器学习驱动的rram紧凑模型：寻址可变性和仿真效率

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3545909

Giyong Hong;In Huh;Joo Hyung You;Jae Myung Choe;Younggu Kim;Changwook Jeong

{"title":"ML-Driven Compact Models for RRAMs: Addressing Variability and Simulation Efficiency","authors":"Giyong Hong;In Huh;Joo Hyung You;Jae Myung Choe;Younggu Kim;Changwook Jeong","doi":"10.1109/LED.2025.3545909","DOIUrl":"https://doi.org/10.1109/LED.2025.3545909","url":null,"abstract":"Machine Learning (ML)-based compact modeling provides a promising alternative to traditional physics-based methods, enabling faster development of compact models for novel devices while offering improved predictive performance. For Resistive Random Access Memory (RRAM) devices, several ML-based compact models have been developed. However, these models often face two key challenges: they fail to capture stochastic cycle-to-cycle variations effectively, and they are difficult to accurately convert into Verilog-A models for SPICE simulations. To address these challenges, we propose a novel variation-aware ML-based compact model for RRAM, using modified deep ensemble techniques to account for cycle-to-cycle variations and model uncertainty, along with a newly designed state determination function to accurately capture resistive switching characteristics. Furthermore, by introducing knowledge distillation combined with a pruning-retraining process, the proposed model achieves a 67% reduction in simulation turnaround time while maintaining predictive accuracy, ensuring strong compatibility with SPICE simulations.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"876-879"},"PeriodicalIF":4.1,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Low-Frequency Noise in Ferroelectric III–V Vertical Gate-All-Around FETs 铁电III-V型垂直栅-全能场效应管的低频噪声

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3546165

Zhongyunshen Zhu;Mamidala Karthik Ram;Anton E. O. Persson;Lars-Erik Wernersson

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Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications 探索令人兴奋的多功能氧化物基电子器件世界：从材料到系统级应用

IF 4.1 2区工程技术

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI: 10.1109/LED.2025.3540242

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