Ultrahigh Frequency SAW Devices Based on 128°Y-X LiNbO₃/SiO₂/Sapphire Structure

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-07 DOI:10.1109/LED.2025.3586647

Jiajun Gao;Sulei Fu;Huiping Xu;Peisen Liu;Boyuan Xiao;Xinchen Zhou;Rui Wang;Donghui Zhang;Feng Pan;Cheng Song

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引用次数: 0

Abstract

Surface acoustic wave (SAW) devices based on multilayer structures herald dawns in satisfying stringent high-frequency demands of 5G and sub-6G wireless systems. However, SAW devices for X-band via lithography have not been realized. This work targets at boosting the operating frequency of SAW devices to the X-band simply by standard photolithography and lift-off techniques. Based on 128°Y-X LiNbO3 (LN)/SiO2/Sapphire heterostructure, a high-order thickness shear (TS) SAW as the intended mode is successfully excited. Theoretical and experimental optimization of LN cut orientation, LN and SiO2 thickness, and wavelength (

$\lambda \text {)}$

enable the resonators and filters to cover most partial X-band. The resonators achieve an ultrahigh center frequency (

${f}_{\text {c}}\text {)}$

of 10.53 GHz, with a large coupling coefficient (

${K}^{{2}}\text {)}$

of 11.05% and Bode-

${Q}_{\max }$

of 372. The corresponding filters covering 8.9–10.3 GHz exhibit a minimum insertion loss (

${\mathrm {IL}}_{\min }\text {)}$

of 3.06–3.31 dB. This first prototype of X-band SAW devices fabricated via standard lithography highlights enormous potential of SAW technology for next-generation wireless systems.

查看原文本刊更多论文

基于128°Y-X LiNbO₃/SiO₂/蓝宝石结构的超高频SAW器件

基于多层结构的表面声波（SAW）器件在满足5G和sub-6G无线系统严格的高频需求方面拉开了序幕。然而，x波段的光刻SAW器件尚未实现。这项工作的目标是通过标准光刻和发射技术将SAW器件的工作频率提高到x波段。基于128°Y-X LiNbO3 (LN)/SiO2/蓝宝石异质结构，成功激发了高阶厚度剪切SAW作为预期模式。对LN切割方向、LN和SiO2厚度以及波长（$\lambda \text {)}$）进行理论和实验优化，使谐振器和滤波器能够覆盖大部分部分x波段。谐振腔的中心频率极高（${f}_{\text {c}}\text {)}$为10.53 GHz），耦合系数较大（${K}^{{2}}\text {)}$为11.05）% and Bode- ${Q}_{\max }$ of 372. The corresponding filters covering 8.9–10.3 GHz exhibit a minimum insertion loss ( ${\mathrm {IL}}_{\min }\text {)}$ of 3.06–3.31 dB. This first prototype of X-band SAW devices fabricated via standard lithography highlights enormous potential of SAW technology for next-generation wireless systems.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.