Graphene Metasurface Absorber for Traveling Wave Tube Backward Wave Oscillation Suppression

IF 4.5 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Pan Wang;Wenlong Han;Liuzhen Peng;Canran Zhang;Qilong Wang
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引用次数: 0

Abstract

To address the issue of backward wave-induced instability in traveling-wave tubes (TWTs), this letter proposes a graphene metasurface absorber (GMA) for backward wave absorption. The beam-wave interaction simulation results show that the U-shaped meander-line slow wave structure (ML-SWS) with a central operating frequency of 80 GHz, generates pronounced backward waves at 119.7 GHz and 233.7 GHz. The GMA exhibits frequency-selective absorption characteristics, achieving an absorption rate exceeding 78% for the aforementioned backward waves. When integrated beneath the U-shaped ML-SWS, further particle-in-cell (PIC) simulations demonstrate a significant suppression of the backward waves, resulting in enhanced operational stability. We prepared microstrip line samples loaded with GMA that can be excited by probe pad. The measured results show that the absorption rate of the GMA at 90 GHz is 86.8%. This design provides a new way to improve the stability of TWTs.
抑制行波管后向波振荡的石墨烯超表面吸收剂
为了解决行波管(twt)中反向波引起的不稳定性问题,这封信提出了一种用于反向波吸收的石墨烯超表面吸收剂(GMA)。仿真结果表明,在中心工作频率为80 GHz的u形弯曲线慢波结构(ML-SWS)在119.7 GHz和233.7 GHz处产生明显的反向波。GMA具有频率选择性吸收特性,对上述反向波的吸收率超过78%。当集成在u型ML-SWS下时,进一步的颗粒池(PIC)模拟表明,反向波得到了显著抑制,从而提高了运行稳定性。我们制备了能被探针垫激发的GMA微带线样品。测量结果表明,GMA在90 GHz频段的吸收率为86.8%。该设计为提高行波管的稳定性提供了一种新的途径。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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