p-GaN Gated HEMT With 770 ION/IOFF Ratio Operating at 800 °C

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-03 DOI:10.1109/LED.2025.3585816

Ajay Kumar Visvkarma;Juan Nicolas Jimenez Gaona;Chan-Wen Chiu;Yixin Xiong;Yi-Shuo Huang;Rian Guan;Nathan S. Banner;Suzanne E. Mohney;Rongming Chu

引用次数: 0

Abstract

A p-GaN gated high electron mobility transistor (HEMT) has been developed and electrically tested up to 800 ° C. The device demonstrated a high on-state current of 80 mA/mm and simultaneously a high ION/IOFF ratio of 770 at 800 ° C. The transistor was also thermally stressed at 800 ° C for 60 min. It demonstrated stable operation throughout the entire stress duration. The favorable on-current, on/off ratio, and stability show a promising path for high-temperature electronics based on GaN.

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p-GaN门控HEMT具有770离子/IOFF比，工作在800°C

开发了一种p-GaN门控高电子迁移率晶体管（HEMT），并对其进行了高达800°C的电测试。该器件在800°C时具有80 mA/mm的高导通电流，同时具有770的高离子/IOFF比。在整个应力持续期间，它表现出稳定的运行。良好的通流、通断比和稳定性显示了GaN在高温电子领域的发展前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.