XBAR-Structured Magnetoelectric Antenna With Magnetostrictive Interdigital Transducers

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-07-03 DOI:10.1109/LED.2025.3585497

Yifan Fu;Rui Hu;Junru Li;Du Li;Yinuo Song;Bin Fang;Wenkui Lin;Zhongming Zeng;Xiangwei Zhu

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Abstract

This letter presents an ultra-compact magnetoelectric (ME) antenna based on a laterally excited bulk acoustic wave resonator (XBAR) structure integrated with magnetostrictive (MS) interdigital transducers (IDTs). The antenna design leverages three distinct resonant regions within a single device: pseudo thin-film bulk acoustic resonator (PFBAR) and contour mode resonator (CMR)-like single-IDT regions, XBAR-type paired-IDT regions, and a floating electrode higher-overtone bulk acoustic resonator (FHBAR) region. These resonant units collectively enable multimodal electromagnetic (EM) radiation with improved gain and broadened operational bandwidth. The device is fabricated using a FeGaB/AlScN/Mo multilayer stack on a silicon substrate via CMOS-compatible processes. Experimental results demonstrate peak gains of −17.8 dBi at 0.268 GHz and −20.5 dBi at 0.667 GHz. This work provides new insights into the design of high-integration, multimode ME antennas and offers a promising solution for future miniaturized wireless communication systems.

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带磁致伸缩数字间换能器的xbar结构磁电天线

本文介绍了一种基于横向激发体声波谐振器（XBAR）结构的超紧凑磁电（ME）天线，该结构集成了磁致伸缩（MS）数字间换能器（idt）。该天线设计利用了单个器件内三个不同的谐振区域：伪薄膜体声谐振器（PFBAR）和类似轮廓模谐振器（CMR）的单idt区域、xbar型成对idt区域和浮动电极高泛音体声谐振器（FHBAR）区域。这些谐振单元共同使多模态电磁（EM）辐射具有改进的增益和更宽的工作带宽。该器件是通过cmos兼容工艺在硅衬底上使用FeGaB/AlScN/Mo多层堆叠制造的。实验结果表明，在0.268 GHz时的峰值增益为- 17.8 dBi，在0.667 GHz时为- 20.5 dBi。这项工作为高集成度、多模ME天线的设计提供了新的见解，并为未来的小型化无线通信系统提供了一个有前途的解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.