A New Matrix Percolation Model for Dielectric Breakdown With Nonuniform Defect Generation

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-24 DOI:10.1109/LED.2025.3563934

Chu Yan;Yi Zhao

引用次数: 0

Abstract

In this study, we propose a new matrix version of the existing dielectric breakdown (BD) percolation model for non-uniform defect generation. Its calculation framework is established utilizing the graph theory of discrete mathematical. This new model is verified by applying to the case of high-k/interfacial layer bilayer gate stack. Furthermore, we also demonstrate the potential of this model in its application to MOSFET’s off-state TDDB or other complex situations by incorporating the TCAD simulations. The flexibility and extensibility of the model is beneficial for further understanding the physical mechanisms of dielectric breakdown in general cases.

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具有非均匀缺陷产生的介质击穿的新矩阵渗透模型

在这项研究中，我们提出了一个新的矩阵版本的现有介质击穿（BD）渗透模型，用于非均匀缺陷的产生。利用离散数学图论建立了其计算框架。通过高k/界面层双层栅极叠加的实例验证了该模型的有效性。此外，我们还通过结合TCAD仿真，证明了该模型在MOSFET的非状态TDDB或其他复杂情况下的应用潜力。该模型的灵活性和可扩展性有利于进一步理解一般情况下介质击穿的物理机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.