Unraveling the Influence of Temperature on Charge Dynamics in Quantum Dot Light-Emitting Diodes

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-04-25 DOI:10.1109/LED.2025.3564505

Jingrui Ma;Siqi Jia;Xiangwei Qu;Kai Wang;Lei Jin;Xiao Wei Sun

引用次数: 0

Abstract

The reliability and efficiency of quantum dot light-emitting diode (QLED) applications are strongly influenced by temperature, making it critical to understand how temperature affects charge dynamics and degradation mechanisms. In this work, we investigate the temperature dependence of key device parameters in QLEDs across a temperature range of −20°C to 85°C. For every 10°C increase, the external quantum efficiency decreases by ~0.65%, and the electroluminescence emission wavelength exhibits a red-shift of ~1.1 nm. Our results demonstrate that the decline in efficiency and stability at elevated temperatures is mainly attributed to the accumulation of excess electrons and the inhibition of exciton recombination. This study provides valuable insights into the degradation mechanisms, deepening our understanding of temperature-driven performance deterioration, which is crucial for the design of more durable and efficient QLEDs.

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揭示温度对量子点发光二极管电荷动力学的影响

量子点发光二极管（QLED）应用的可靠性和效率受到温度的强烈影响，因此了解温度如何影响电荷动力学和降解机制至关重要。在这项工作中，我们研究了qled中关键器件参数在−20°C至85°C温度范围内的温度依赖性。每增加10℃，外量子效率降低~0.65%，电致发光发射波长红移~1.1 nm。我们的研究结果表明，高温下效率和稳定性的下降主要归因于多余电子的积累和激子复合的抑制。这项研究为降解机制提供了有价值的见解，加深了我们对温度驱动性能退化的理解，这对于设计更耐用和高效的qled至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.