基于Au-WS 2 -Ge异质结构的偏置可选双频雪崩探测器

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-28 DOI:10.1109/LED.2025.3546631

Yuekai Hao;Ningning Zhang;Yichi Zhang;Zhao Han;Qiancui Zhang;Bu Zhang;Jiting Hu;Tian Miao;Huiyong Hu;Liming Wang;Zhangming Zhu

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引用次数: 0

摘要

在这里，我们报告了由于在混合维Au-WS2-Ge雪崩光电探测器中堆叠背靠背二极管结构而产生的偏置可选可见光和近红外光响应。根据偏置电压的极性，可以实现肖特基结（Au/WS2）和PN结（WS2/Ge）之间的可控切换。因此，该装置可以提供与偏置相关的单波段（可见）和融合波段（可见和近红外）雪崩检测模式。当肖特基结反向时，在达到雪崩击穿（单带模式）时，可以获得532 nm的超高响应率（超过2000 A/W）和增益（349）。同时，当PN结反向时，在532和1550 nm（融合波段模式）分别可以实现354和519附近的超高增益。模拟的I-V特征与实验结果吻合较好。该器件为集成双波段雪崩器件在光电检测中的应用提供了新的方向。

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Bias-Selectable Dual-Band Avalanche Detector Based on Au-WS₂-Ge Heterostructure

Here, we report a bias-selectable visible and near-infrared photoresponses due to stacked back-to-back diodes structure in a mixed-dimensional Au-WS2-Ge avalanche photodetector. Controllable switching between Schottky (Au/WS2) and PN (WS2/Ge) junctions can be realized depending on the polarity of the bias voltage. Therefore, this device can provide bias-dependent single-band (visible) and fused-band (visible&near-infrared) avalanche detection modes. When the Schottky junction is reversed, ultra-high responsivity (over 2000 A/W) and gain (349) at 532 nm can be obtained when reaching the avalanche breakdown (single-band mode). Meanwhile, when the PN junction is reversed, the ultra-high gains around 354 and 519 can be realized at both 532 and 1550 nm, respectively (fused-band mode). The simulated I-V features agree well with the experimental results. This device provides a novel direction for the application of integrated dual-band avalanche devices in optoelectronic detection.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.