Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-03-05 DOI:10.1109/LED.2025.3548509

Tao Yang;Ben J. Sekely;Yashas Satapathy;Greg Allion;Gil Atar;Philip Barletta;Carl Haber;Steve Holland;John F. Muth;Spyridon Pavlidis;Stefania Stucci;Abraham Tishelman-Charny

引用次数: 0

Abstract

Silicon carbide Low Gain Avalanche Detectors (4H-SiC LGADs), exhibiting an ultra-fast time response and excellent time resolution, are reported. Via TCAD simulations, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle. Experimental measurements confirm that the field plate significantly increases the breakdown voltage. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT), showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps in response to an injected laser signal tuned to represent a single minimum ionizing particle (MIP) at room temperature. Additionally, the gain suppression effect is observed in the 4H-SiC LGAD for the first time.

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具有蚀刻终端和场极板的超快速4H-SiC LGAD

报道了具有超快时间响应和优异时间分辨率的碳化硅低增益雪崩探测器（4H-SiC LGADs）。通过TCAD仿真，提出了利用场极板抑制负斜面刻蚀角引起的高电场的方法。实验测量证实，场极板显著提高击穿电压。利用紫外瞬态电流技术（UV-TCT）测量了增益和时间分辨率，结果表明，当注入的激光信号在室温下调谐为单个最小电离粒子（MIP）时，4H-SiC LGADs具有优异的时序性能，时间分辨率优于35ps。此外，还首次在4H-SiC LGAD中观察到增益抑制效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.