E-Mode AlGaN/GaN hemt中栅极凹槽的无损伤中性束刻蚀

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-03-06 DOI:10.1109/LED.2025.3548676

Yi-Ho Chen;Fu-Chuan Chu;Muhammad Aslam;Yao-Jen Lee;Yiming Li;Seiji Samukawa

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引用次数: 0

摘要

凹槽栅极蚀刻是实现增强模式（e模式）AlGaN/GaN高电子迁移率晶体管（hemt）的关键技术，因为界面容易受到蚀刻损伤。本研究使用中性束蚀刻（NBE）技术制造凹槽栅极。通过调整NBE装置的孔径厚度，我们模拟了nb模式和等离子模式刻蚀。利用这两种模式制备的e模hemt的电特性通过直流、噪声和脉冲IV测量进行了分析和比较。结果表明，nb -凹槽hemt具有优异的性能。

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Damage-Free Neutral Beam Etching for Gate Recess in E-Mode AlGaN/GaN HEMTs

Recess gate etching is a critical technique for achieving enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs) because the interface is susceptible to the etching damage. This study fabricates recess gates using the neutral beam etching (NBE) technique. By adjusting the aperture thickness in the NBE apparatus, we simulate both NB-mode and plasma-mode etching. The electrical characteristics of E-mode HEMTs fabricated using these two modes are analyzed and compared through DC, noise, and pulsed IV measurements. The results demonstrate that NB-recessed HEMTs exhibit superior performance.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.