用于经济高效的高压数字隔离的单层嵌套线圈片上变压器

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jinyu Zhang;Jixiang Chen;Song Xue;Yihao Wang;Rongxiang Wu
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引用次数: 0

摘要

在这封信中,提出了一种单层嵌套线圈片上变压器(NCOCT),并演示了成本效益高的高压数字隔离。两个嵌套平面螺旋线圈被实现在一个单一的金属层为经济有效的制造。金属层夹在阻挡击穿路径的两个隔离层之间。通过隔离的固有距离(DTI)由两个线圈之间的横向布局距离决定,这使得实现高压隔离变得容易。制作的0.64 mm2 NCOCT线圈电感为28/27 nH,具有12 kV直流和8 kVrms交流的高隔离能力,DTI为37.2~\mu $ m,耦合系数为0.3,主次寄生电容为0.35 pF,与传统变压器结构相比具有相似的信共模瞬态噪声比。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Single-Layer Nested-Coil On-Chip Transformer for Cost-Effective High-Voltage Digital Isolation
In this letter, a single-layer nested-coil on-chip transformer (NCOCT) is proposed and demonstrated for cost-effective high-voltage digital isolation. The two nested planar spiral coils are implemented in a single metal layer for cost-effective fabrication. The metal layer is sandwiched between two isolation layers which block the breakdown paths. The intrinsic distance through isolation (DTI) is determined by the lateral layout distance between the two coils, which makes it easy to achieve high-voltage isolation. The fabricated 0.64-mm2 NCOCT achieved coil inductances of 28/27 nH, as well as a high isolation capability of 12 kV DC and 8 kVrms AC with a DTI of $37.2~\mu $ m. The small coupling factor of 0.3 and the small primary-to-secondary parasitic capacitance of 0.35 pF provides a similar signal-to-common-mode-transient-noise ratio compared with conventional transformer structures.
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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