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Proceedings of 4th International Conference on Solid-State and IC Technology最新文献

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Optimization of surface preparation for direct silicon-silicon bonding 硅-硅直接键合表面制备工艺优化
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503339
A. S. Haque, D. Moore
{"title":"Optimization of surface preparation for direct silicon-silicon bonding","authors":"A. S. Haque, D. Moore","doi":"10.1109/ICSICT.1995.503339","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503339","url":null,"abstract":"The primary objective of this paper is to present an optimum surface preparation technique for subsequent silicon wafer bonding with direct bonding process. Several key factors that govern the quality of the wafer surfaces, such as the degree of hydrophobicity, HF etching time, composition of HF etching solution and DI water rinse, are examined. Moreover, to optimize the surface preparation, an argon ion sputtering scheme is also successfully introduced after the HF etching to further minimize the oxide growth on the silicon wafer surface. Analyses using XPS are presented to show surface composition changes in conjunction with the argon ion sputtering and the subsequent air exposure before wafer contacting.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125824771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
VLSI implementation of a learning actractor neuronal network (LANN) 学习算子神经网络(LANN)的VLSI实现
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500156
S. Bertazzoni, G. Cardarilli, R. Lojacono, M. Salmeri, A. Salsano, O. Simonelli
{"title":"VLSI implementation of a learning actractor neuronal network (LANN)","authors":"S. Bertazzoni, G. Cardarilli, R. Lojacono, M. Salmeri, A. Salsano, O. Simonelli","doi":"10.1109/ICSICT.1995.500156","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500156","url":null,"abstract":"In this paper we describe the most important steps of the VLSI analog implementation of a learning actractor neural network. An overview of the theoretical model is presented while the most important circuits are described in greater details.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130000303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the longitudinal micro-distribution in the principal parameter properties of LEC SI-GaAs LEC SI-GaAs主要参数性质的纵向微分布研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500179
Xiukun He, Q. Ru, Li Ding, Guangpin Li, Xiao-Dan Guo
{"title":"Study of the longitudinal micro-distribution in the principal parameter properties of LEC SI-GaAs","authors":"Xiukun He, Q. Ru, Li Ding, Guangpin Li, Xiao-Dan Guo","doi":"10.1109/ICSICT.1995.500179","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500179","url":null,"abstract":"The regularity of the longitudinal micro-distribution in parameters such as shallow acceptor carbon, deep donor EL2, resistivity and EPD was studied. The experimental results showed that for undoped LEC SI-GaAs crystal grown in an As rich [As/(As+Ga)=0.51] melt, C concentration and resistivity reduced from the seed-end to the tail-end. EL2 longitudinal distribution has three characteristic regions. EPD longitudinal distribution is a non-symmetrical \"U\" shape. The origin of these longitudinal distributions in SI-GaAs is discussed and a method to improve the homogeneity of SI-GaAs crystals is investigated.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129340704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of metalorganic chemical vapor deposited tantalum nitride thin films 金属有机化学气相沉积氮化钽薄膜的性能
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503346
S.C. Sun, M. Tsai, C. Tsai, H. Chiu
{"title":"Properties of metalorganic chemical vapor deposited tantalum nitride thin films","authors":"S.C. Sun, M. Tsai, C. Tsai, H. Chiu","doi":"10.1109/ICSICT.1995.503346","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503346","url":null,"abstract":"Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis indicate that 600/spl deg/C as-deposited films exhibit polycrystalline structure with <200> preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129285786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaAs/GaAlAs quantum well infrared detector with bias-tuned wavelength and large absorption band-width 具有偏置调谐波长和大吸收带宽度的GaAs/GaAlAs量子阱红外探测器
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503544
C. Du, J. Deng, Qun Li, G. Shen
{"title":"GaAs/GaAlAs quantum well infrared detector with bias-tuned wavelength and large absorption band-width","authors":"C. Du, J. Deng, Qun Li, G. Shen","doi":"10.1109/ICSICT.1995.503544","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503544","url":null,"abstract":"A new type of GaAs/GaAlAs quantum well infrared photodetectors with two different structures and features has been designed. For the first one, the detecting wavelength can be tuned by bias, and for the second one, the large absorption bandwidth can be obtained. They have better performances than that of the conventional GaAs/GaAlAs quantum well infrared photodetectors. They have a potential future. Simulation and preliminary experiments have been performed.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124922963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New numerical method for semiconductor device simulation 半导体器件仿真的新数值方法
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503371
M.C. Poon, T. Y. Wong, K. Sin, Melvin H. L. Wong
{"title":"New numerical method for semiconductor device simulation","authors":"M.C. Poon, T. Y. Wong, K. Sin, Melvin H. L. Wong","doi":"10.1109/ICSICT.1995.503371","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503371","url":null,"abstract":"This paper will present a new initial guess method in the numerical solving of semiconductor equations. The method has been applied to many examples and fast and accurate solutions have been obtained.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130606039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2-dimensional analysis and experiment of planar high-voltage device terminal 平面高压器件端子的二维分析与实验
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500093
Gong Xiaowu, Gao Yumin, Luo Jinsheng
{"title":"2-dimensional analysis and experiment of planar high-voltage device terminal","authors":"Gong Xiaowu, Gao Yumin, Luo Jinsheng","doi":"10.1109/ICSICT.1995.500093","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500093","url":null,"abstract":"Using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of planar high-voltage device. It can simulate reverse characteristics of high-voltage device relating to field limiting rings, field plates, SiO/sub 2/ dielectric and interface charge. The simulation example and experimental results of a planar junction structure with field plates and field rings are given in this paper.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116402877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal side-wall pattern with a supporter for X-ray mask 金属侧壁图案与x射线面罩的支持
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503388
Xunchun Li, Mengzhen Chen, Tianchun Ye, Yuling Wang, Baoyin Sun, Runmei Wang, Changqing Xie, Zhengya Cao, Z. Zhu
{"title":"Metal side-wall pattern with a supporter for X-ray mask","authors":"Xunchun Li, Mengzhen Chen, Tianchun Ye, Yuling Wang, Baoyin Sun, Runmei Wang, Changqing Xie, Zhengya Cao, Z. Zhu","doi":"10.1109/ICSICT.1995.503388","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503388","url":null,"abstract":"A new method for fabricating sub-quarter micron X-ray mask patterns with high aspect ratio for HEMT and MOSFET is proposed. The key point of the method is to make the metal side-wall pattern with a supporter transparent to X-rays. Using the X-ray mask pattern made in the new method, a 93 nm line width positive resist pattern and a 260 nm line width negative resist pattern have been obtained. It is expected that this method could be applied to nanometer X-ray lithography for generation of the patterns of HEMT and MOSFET devices in the near future.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116320545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-speed polysilicon emitter bipolar technologies 高速多晶硅发射极双极技术
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503553
Lichun Zhang, Xuewen Ni, Yangyuan Wang
{"title":"High-speed polysilicon emitter bipolar technologies","authors":"Lichun Zhang, Xuewen Ni, Yangyuan Wang","doi":"10.1109/ICSICT.1995.503553","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503553","url":null,"abstract":"Summary form only given. Since the 1980's, polysilicon emitter has become the main bipolar technology for high-speed, ultra-high-speed and BICMOS IC. In this paper, our group proposed the single polysilicon emitter structure. A set of advanced bipolar technologies such as deep-trench-isolation, ion implantation compensated collector region, polysilicon emitter, emitter-base oxidation spacer isolation, ion implantation rapid thermal annealing, and Cobalt silicide self-align are used for scaling down the devices.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121499503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MeV ion implantation and application MeV离子注入与应用
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503380
Chengzhou Ji, W. Lu, Guohui Li
{"title":"MeV ion implantation and application","authors":"Chengzhou Ji, W. Lu, Guohui Li","doi":"10.1109/ICSICT.1995.503380","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503380","url":null,"abstract":"This paper briefly reviews MeV implantation studies and applications to semiconductors carried out at Beijing Normal University. The reduction of secondary defects formation in silicon and the activation of Si implants in GaAs are emphasized. Selected examples are presented.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132787966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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