2-dimensional analysis and experiment of planar high-voltage device terminal

Abstract

Using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of planar high-voltage device. It can simulate reverse characteristics of high-voltage device relating to field limiting rings, field plates, SiO/sub 2/ dielectric and interface charge. The simulation example and experimental results of a planar junction structure with field plates and field rings are given in this paper.