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Proceedings of 4th International Conference on Solid-State and IC Technology最新文献

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Vacuum ultraviolet-induced and enhanced oxidation of Si and GaAs in N/sub 2/O 真空紫外诱导和增强N/sub /O中Si和GaAs的氧化
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503387
Y. Du, Y. Hu, H. Wang, X. Yao, Y.C. Zhao, D. Sun, F. M. Li
{"title":"Vacuum ultraviolet-induced and enhanced oxidation of Si and GaAs in N/sub 2/O","authors":"Y. Du, Y. Hu, H. Wang, X. Yao, Y.C. Zhao, D. Sun, F. M. Li","doi":"10.1109/ICSICT.1995.503387","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503387","url":null,"abstract":"We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N/sub 2/O) ambient at low substrate temperature (<500 /spl deg/C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (/spl lambda/=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123694330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient layout style of CMOS output buffer to improve driving capability of low-voltage submicron CMOS IC's 一种高效的CMOS输出缓冲器布局方式，提高了低压亚微米CMOS集成电路的驱动性能
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499780
M. Ker, Chung-Yu Wu, Tao Cheng, Hun-Hsien Chang, M.J.-N. Wu, Talee Yu
{"title":"Efficient layout style of CMOS output buffer to improve driving capability of low-voltage submicron CMOS IC's","authors":"M. Ker, Chung-Yu Wu, Tao Cheng, Hun-Hsien Chang, M.J.-N. Wu, Talee Yu","doi":"10.1109/ICSICT.1995.499780","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499780","url":null,"abstract":"A novel square-type layout style is proposed to efficiently implement CMOS output buffer with larger W/L ratio into a smaller silicon layout area than that of conventional finger-type layout style. Using this proposed layout style, the driving capability of CMOS output buffer in low-voltage submicron CMOS IC's can be effectively improved without increasing the layout area.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125289608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-dimensional hydrodynamic simulation of High Electron Mobility Transistors using a block iterative scheme in combination with full Newton method 基于块迭代法和全牛顿法的高电子迁移率晶体管二维流体动力学模拟
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503360
T. Simlinger, R. Deutschmann, C. Fischer, H. Kosina, S. Selberherr
{"title":"Two-dimensional hydrodynamic simulation of High Electron Mobility Transistors using a block iterative scheme in combination with full Newton method","authors":"T. Simlinger, R. Deutschmann, C. Fischer, H. Kosina, S. Selberherr","doi":"10.1109/ICSICT.1995.503360","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503360","url":null,"abstract":"Pseudomorphic submicron High Electron Mobility Transistors (HEMT) have conquered a broad field of application because of their high-frequency performance. The DC characteristics of a 0.23 /spl mu/m gate length transistor have been calculated by our recently developed device simulator using a hydrodynamic model (HD) which accounts for carrier heating effects in the short channel region. A block iterative scheme combined with a full Newton method is applied to improve the convergence performance, robustness and stability of the HD model. Furthermore, an extended Scharfetter-Gummel scheme was used to account for the spatial variation of material properties such as band edge energy and effective density of states.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125293472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
BMHMT: device & model BMHMT:设备和型号
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503560
Ping-Hau Chen, Zhijian Li, Litian Liu
{"title":"BMHMT: device & model","authors":"Ping-Hau Chen, Zhijian Li, Litian Liu","doi":"10.1109/ICSICT.1995.503560","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503560","url":null,"abstract":"A kind of Bi-MOS Hybrid-Mode transistor (BMHMT) and its analytical model are proposed. Both experiment and simulation confirm our conclusions.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122613517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Control on the characteristics of the static induction transistor (SIT) 静电感应晶体管(SIT)特性的控制
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500244
S.Y. Li, R.X. Liu, S. Liu
{"title":"Control on the characteristics of the static induction transistor (SIT)","authors":"S.Y. Li, R.X. Liu, S. Liu","doi":"10.1109/ICSICT.1995.500244","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500244","url":null,"abstract":"The SIT's characteristics, including triode-like, pentode-like and mixed triode-/pentode-like, are dependent strongly on device structure. The channel length l/sub c/, the channel thickness d/sub c/, the ratio of l/sub c//d/sub c/ and the channel doping concentration Nd are all essential parameters in determining the characteristics of the SIT. It is observed the channel factor is dominant in controlling the characteristics.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128556473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-planarized deep trench process for self-aligned nitride bipolar device isolation 自平面化深沟槽工艺用于自对准氮化物双极器件隔离
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500074
T. Lo, H.C. Huang, J.S. Zhang
{"title":"Self-planarized deep trench process for self-aligned nitride bipolar device isolation","authors":"T. Lo, H.C. Huang, J.S. Zhang","doi":"10.1109/ICSICT.1995.500074","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500074","url":null,"abstract":"The self-planarization of deep trench with 2 micron thick field oxidation has been developed for self-aligned nitride bipolar integrated circuit fabrication. Trenches with geometry of 2 /spl mu/m wide by 8 /spl mu/m deep were achieved by anisotropic etching for isolating global buried collectors. They were then filled and planarized simply by a local oxidation of silicon (LOCOS) without polysilicon re-filling or etching back, while maintained a collector-to-collector leakage of 5 /spl mu/a at 15 V. As proof-of-technology, arrays of trench-isolated bipolar transistors with cut-off frequency of 14 GHz were gold-metallized without extra planarization of the trench.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124788110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a 11/12 bit compatible high-voltage D/A converter with output to 40 V 11/12位兼容输出至40v的高压数模转换器的研制
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499650
Zong-Guang Yu, G. Chang, H Zhao, Yifeng Zhou, Xiao Hua, Juyan Xu, L. Meng, Tongli Wei
{"title":"Development of a 11/12 bit compatible high-voltage D/A converter with output to 40 V","authors":"Zong-Guang Yu, G. Chang, H Zhao, Yifeng Zhou, Xiao Hua, Juyan Xu, L. Meng, Tongli Wei","doi":"10.1109/ICSICT.1995.499650","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499650","url":null,"abstract":"A 11/12 bit compatible high-voltage D/A converter with output range within 0-40 V is presented. It can endure 50 V high-voltage, consists of input protection circuit, current limit circuits, switch array, and R-2R network. A high voltage device structure has been used. The die size is 5.024/spl times/3.898 mm. The converter was fabricated by the p-n junction isolation bipolar process. The result of measurement has shown that it can operate continuously under 50 V voltage. The total conversion time is less than 4.0 /spl mu/s.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130550703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An efficient implementation of motion estimation algorithms 一个高效实现的运动估计算法
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503394
Q. Shu, Hongyi Chen
{"title":"An efficient implementation of motion estimation algorithms","authors":"Q. Shu, Hongyi Chen","doi":"10.1109/ICSICT.1995.503394","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503394","url":null,"abstract":"In this paper, a novel low latency and high throughput programmable motion estimator architecture is proposed, which can efficiently implement both fall search and hierarchical search algorithms in motion estimation in VLSI.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"3 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123618018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The linearization of MOS source-coupled pair MOS源耦合对的线性化
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499645
Shicai Qin, Mu-Zhon Shao, Xiangluan Jia
{"title":"The linearization of MOS source-coupled pair","authors":"Shicai Qin, Mu-Zhon Shao, Xiangluan Jia","doi":"10.1109/ICSICT.1995.499645","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499645","url":null,"abstract":"This paper presents a new linearization approach for a MOS source-coupled pair that utilizes a current I/sub ss/=a+bV/sup 2/ produced by an asymmetrical source-coupled pair as the tail current to cancel out its inherent nonlinearity. Simulation results show that under /spl plusmn/5 V bias voltage and over /spl plusmn/3 V input signal swings, the maximum full scale nonlinear error is /spl plusmn/0.68%.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120893579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on solid state reaction of TiN/Co/Ti multi-layer with amorphous silicon TiN/Co/Ti多层膜与非晶硅的固相反应研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499266
Hua Fang, Bingzong Li, W. Yu, Wei-ning Huang, Kai Shao, Wei-Jun Wu, Z. Gu, G. Jiang
{"title":"Study on solid state reaction of TiN/Co/Ti multi-layer with amorphous silicon","authors":"Hua Fang, Bingzong Li, W. Yu, Wei-ning Huang, Kai Shao, Wei-Jun Wu, Z. Gu, G. Jiang","doi":"10.1109/ICSICT.1995.499266","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499266","url":null,"abstract":"Solid state reaction of TiN/Co/Ti multilayer with PECVD amorphous silicon has been studied. Experimental results show that uniform polycrystalline CoSi/sub 2/ with good thermal stability and smooth surface can be obtained after thermal annealing.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121174685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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