Control on the characteristics of the static induction transistor (SIT)

Abstract

The SIT's characteristics, including triode-like, pentode-like and mixed triode-/pentode-like, are dependent strongly on device structure. The channel length l/sub c/, the channel thickness d/sub c/, the ratio of l/sub c//d/sub c/ and the channel doping concentration Nd are all essential parameters in determining the characteristics of the SIT. It is observed the channel factor is dominant in controlling the characteristics.