Y. Du, Y. Hu, H. Wang, X. Yao, Y.C. Zhao, D. Sun, F. M. Li
{"title":"真空紫外诱导和增强N/sub /O中Si和GaAs的氧化","authors":"Y. Du, Y. Hu, H. Wang, X. Yao, Y.C. Zhao, D. Sun, F. M. Li","doi":"10.1109/ICSICT.1995.503387","DOIUrl":null,"url":null,"abstract":"We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N/sub 2/O) ambient at low substrate temperature (<500 /spl deg/C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (/spl lambda/=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vacuum ultraviolet-induced and enhanced oxidation of Si and GaAs in N/sub 2/O\",\"authors\":\"Y. Du, Y. Hu, H. Wang, X. Yao, Y.C. Zhao, D. Sun, F. M. Li\",\"doi\":\"10.1109/ICSICT.1995.503387\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N/sub 2/O) ambient at low substrate temperature (<500 /spl deg/C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (/spl lambda/=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"110 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503387\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503387","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vacuum ultraviolet-induced and enhanced oxidation of Si and GaAs in N/sub 2/O
We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N/sub 2/O) ambient at low substrate temperature (<500 /spl deg/C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (/spl lambda/=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
