Study on solid state reaction of TiN/Co/Ti multi-layer with amorphous silicon

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.499266

Hua Fang, Bingzong Li, W. Yu, Wei-ning Huang, Kai Shao, Wei-Jun Wu, Z. Gu, G. Jiang

引用次数: 0

Abstract

Solid state reaction of TiN/Co/Ti multilayer with PECVD amorphous silicon has been studied. Experimental results show that uniform polycrystalline CoSi/sub 2/ with good thermal stability and smooth surface can be obtained after thermal annealing.

查看原文本刊更多论文

TiN/Co/Ti多层膜与非晶硅的固相反应研究

研究了TiN/Co/Ti多层膜与PECVD非晶硅的固相反应。实验结果表明，经热处理后可获得均匀、热稳定性好、表面光滑的CoSi/sub 2/多晶。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of 4th International Conference on Solid-State and IC Technology

自引率

0.00%

发文量