{"title":"静电感应晶体管(SIT)特性的控制","authors":"S.Y. Li, R.X. Liu, S. Liu","doi":"10.1109/ICSICT.1995.500244","DOIUrl":null,"url":null,"abstract":"The SIT's characteristics, including triode-like, pentode-like and mixed triode-/pentode-like, are dependent strongly on device structure. The channel length l/sub c/, the channel thickness d/sub c/, the ratio of l/sub c//d/sub c/ and the channel doping concentration Nd are all essential parameters in determining the characteristics of the SIT. It is observed the channel factor is dominant in controlling the characteristics.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Control on the characteristics of the static induction transistor (SIT)\",\"authors\":\"S.Y. Li, R.X. Liu, S. Liu\",\"doi\":\"10.1109/ICSICT.1995.500244\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The SIT's characteristics, including triode-like, pentode-like and mixed triode-/pentode-like, are dependent strongly on device structure. The channel length l/sub c/, the channel thickness d/sub c/, the ratio of l/sub c//d/sub c/ and the channel doping concentration Nd are all essential parameters in determining the characteristics of the SIT. It is observed the channel factor is dominant in controlling the characteristics.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.500244\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.500244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Control on the characteristics of the static induction transistor (SIT)
The SIT's characteristics, including triode-like, pentode-like and mixed triode-/pentode-like, are dependent strongly on device structure. The channel length l/sub c/, the channel thickness d/sub c/, the ratio of l/sub c//d/sub c/ and the channel doping concentration Nd are all essential parameters in determining the characteristics of the SIT. It is observed the channel factor is dominant in controlling the characteristics.
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