Two-dimensional hydrodynamic simulation of High Electron Mobility Transistors using a block iterative scheme in combination with full Newton method

Abstract

Pseudomorphic submicron High Electron Mobility Transistors (HEMT) have conquered a broad field of application because of their high-frequency performance. The DC characteristics of a 0.23 /spl mu/m gate length transistor have been calculated by our recently developed device simulator using a hydrodynamic model (HD) which accounts for carrier heating effects in the short channel region. A block iterative scheme combined with a full Newton method is applied to improve the convergence performance, robustness and stability of the HD model. Furthermore, an extended Scharfetter-Gummel scheme was used to account for the spatial variation of material properties such as band edge energy and effective density of states.