Y. Du, Y. Hu, H. Wang, X. Yao, Y.C. Zhao, D. Sun, F. M. Li
{"title":"Vacuum ultraviolet-induced and enhanced oxidation of Si and GaAs in N/sub 2/O","authors":"Y. Du, Y. Hu, H. Wang, X. Yao, Y.C. Zhao, D. Sun, F. M. Li","doi":"10.1109/ICSICT.1995.503387","DOIUrl":null,"url":null,"abstract":"We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N/sub 2/O) ambient at low substrate temperature (<500 /spl deg/C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (/spl lambda/=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503387","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N/sub 2/O) ambient at low substrate temperature (<500 /spl deg/C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (/spl lambda/=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species.