Vacuum ultraviolet-induced and enhanced oxidation of Si and GaAs in N/sub 2/O

Y. Du, Y. Hu, H. Wang, X. Yao, Y.C. Zhao, D. Sun, F. M. Li
{"title":"Vacuum ultraviolet-induced and enhanced oxidation of Si and GaAs in N/sub 2/O","authors":"Y. Du, Y. Hu, H. Wang, X. Yao, Y.C. Zhao, D. Sun, F. M. Li","doi":"10.1109/ICSICT.1995.503387","DOIUrl":null,"url":null,"abstract":"We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N/sub 2/O) ambient at low substrate temperature (<500 /spl deg/C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (/spl lambda/=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503387","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N/sub 2/O) ambient at low substrate temperature (<500 /spl deg/C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (/spl lambda/=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species.
真空紫外诱导和增强N/sub /O中Si和GaAs的氧化
我们提出了一种低温光(VUV)增强氧化技术,在低衬底温度(<500 /spl℃)的氧化亚氮(N/sub 2/O)环境下在Si和GaAs上生长超薄介电薄膜。在紫外辐射下,Si和GaAs的氧化速率急剧增加。利用俄歇电子能谱和x射线光电子能谱监测薄膜成分。紫外辐射引起的皮下氧化(/spl λ /=110-180 nm)依赖于光增强和氧化物质反应性的非热机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信