基于块迭代法和全牛顿法的高电子迁移率晶体管二维流体动力学模拟

T. Simlinger, R. Deutschmann, C. Fischer, H. Kosina, S. Selberherr
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引用次数: 5

摘要

伪晶亚微米高电子迁移率晶体管(HEMT)以其优异的高频性能赢得了广泛的应用领域。采用流体动力学模型(HD)计算了0.23 /spl mu/m栅极长度晶体管的直流特性,该模型考虑了短通道区域的载流子加热效应。为了提高模型的收敛性、鲁棒性和稳定性,采用了块迭代和全牛顿方法相结合的方法。此外,采用扩展的Scharfetter-Gummel格式来解释带边能量和有效态密度等材料性质的空间变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two-dimensional hydrodynamic simulation of High Electron Mobility Transistors using a block iterative scheme in combination with full Newton method
Pseudomorphic submicron High Electron Mobility Transistors (HEMT) have conquered a broad field of application because of their high-frequency performance. The DC characteristics of a 0.23 /spl mu/m gate length transistor have been calculated by our recently developed device simulator using a hydrodynamic model (HD) which accounts for carrier heating effects in the short channel region. A block iterative scheme combined with a full Newton method is applied to improve the convergence performance, robustness and stability of the HD model. Furthermore, an extended Scharfetter-Gummel scheme was used to account for the spatial variation of material properties such as band edge energy and effective density of states.
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