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Proceedings of 4th International Conference on Solid-State and IC Technology最新文献

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Accurate and simple time domain model of interconnects modeled as transmission line networks 以传输线网络为模型的互连准确、简单的时域模型
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500160
Qingjian Yu, E. Kuh
{"title":"Accurate and simple time domain model of interconnects modeled as transmission line networks","authors":"Qingjian Yu, E. Kuh","doi":"10.1109/ICSICT.1995.500160","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500160","url":null,"abstract":"In this paper, we present a new time domain model of interconnects modeled as transmission line networks. Each element of the characteristics of a transmission line is modeled by a principal part and a remainder. The principal part consists of an impulse and an exponential function, whose Laplace transform matches the original function at infinity frequency with order 1 and at zero frequency with order 0. The remainder consists of a cubic polynomial for a single line and a piecewise cubic polynomial for coupled lines. The model is stable, accurate, simple and efficient to use.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125975967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A study of the interface phenomena of TiW/Si and TiN/Ti/Si TiW/Si和TiN/Ti/Si界面现象的研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503347
Eungsoo Kim, S. Shim, Chang-Bum Jeong, Soonkwon Lim
{"title":"A study of the interface phenomena of TiW/Si and TiN/Ti/Si","authors":"Eungsoo Kim, S. Shim, Chang-Bum Jeong, Soonkwon Lim","doi":"10.1109/ICSICT.1995.503347","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503347","url":null,"abstract":"In device processing, TiW or Ti/TiN is generally used as a barrier metal. Here, we report interesting phenomena at the interface between the barrier metal and Si substrate, depending on the deposition temperature and type of barrier metal, after heat treatment at a temperature of 450/spl deg/C followed by Al deposition. However, the phenomena are not observed below a heat treatment temperature of 400/spl deg/C. To investigate the diffusion barrier characteristic and interface reactions between barrier metal and Si, SEM micrographs, XRD and electron spectroscopy for chemical analysis (ESCA) depth profiles are analyzed.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126107413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
X-ray diffraction study of hydrogen complexes in hydrogenated nanocrystalline silicon 氢化纳米晶硅中氢配合物的x射线衍射研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499271
F. Yun, Y. Wana, X. Liao
{"title":"X-ray diffraction study of hydrogen complexes in hydrogenated nanocrystalline silicon","authors":"F. Yun, Y. Wana, X. Liao","doi":"10.1109/ICSICT.1995.499271","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499271","url":null,"abstract":"This paper presents X-ray diffraction results on hydrogenated nanocrystalline silicon films showing a new diffraction feature at 2/spl theta/=33.6/spl deg/, which is supposed to be an identifying signature of the atomic relaxation of hydrogenated Si(111) surface of nano-crystallites.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122023105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
0.2 /spl mu/m LDD NMOSFETs fabricated by conventional optical lithography 采用传统光刻技术制备的0.2 /spl μ m LDD nmosfet
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500075
Jinshu Zhang, T. Lo, P. Tsien
{"title":"0.2 /spl mu/m LDD NMOSFETs fabricated by conventional optical lithography","authors":"Jinshu Zhang, T. Lo, P. Tsien","doi":"10.1109/ICSICT.1995.500075","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500075","url":null,"abstract":"To improve the performance and reliability of deep sub micron MOSFETs, we propose an innovative non-planar LDD structure which can be fabricated by conventional optical lithography and plasma etching without using e-beam lithography. The proposed structure overcomes the trade-off between short channel effects and hot carrier effects which are most important in deep sub-micron devices, and retains the high current driving ability.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122058486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth mechanism of /spl beta/-FeSi/sub 2/ by reactive deposition epitaxy 反应沉积外延/spl β /-FeSi/sub 2/生长机理
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500073
Lianwei Wang, Chenglu Lin, Q. Shen, Rushan Ni, Xiangdong Chen, S. Zou, M. Ostling
{"title":"Growth mechanism of /spl beta/-FeSi/sub 2/ by reactive deposition epitaxy","authors":"Lianwei Wang, Chenglu Lin, Q. Shen, Rushan Ni, Xiangdong Chen, S. Zou, M. Ostling","doi":"10.1109/ICSICT.1995.500073","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500073","url":null,"abstract":"The growth mechanism of a semiconducting /spl beta/-FeSi/sub 2/ film has been investigated by in situ reflective high energy electron diffraction observation combined with ex situ AES depth profile and cross-section transmission electron microscopy. At the initial stage, a metastable cubic /spl gamma/-FeSi/sub 2/ phase has been detected on both Si(100) and (111) wafers. A multilayer structure Fe-rich silicide FeSi/sub 1+x//Si has been revealed. During the deposition, /spl beta/-FeSi/sub 2/ only directly formed on the top layer at high temperature.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122067623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal stress and relaxation behaviour of Al(Cu) submicron interconnects Al(Cu)亚微米互连的热应力和弛豫行为
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500180
P. Ho, I. Yeo, C. Liao, S. Anderson, H. Kawasaki
{"title":"Thermal stress and relaxation behaviour of Al(Cu) submicron interconnects","authors":"P. Ho, I. Yeo, C. Liao, S. Anderson, H. Kawasaki","doi":"10.1109/ICSICT.1995.500180","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500180","url":null,"abstract":"This paper addresses the reliability problem of stress-induced void formation in submicron Al(Cu) interconnect metallization. The discussion is focused on the driving force for void formation which is investigated by examining the nature of the thermal stress and its relaxation characteristics of submicron interconnect structures. The recent experimental results obtained by bending beam and X-ray diffraction techniques on the thermal stress and stress relaxation in Al(Cu) interconnect metallization are reviewed. The results reveal that as passivated Al(Cu) lines become narrower, the metal exhibits increasingly elastic behaviour with higher stress levels, a combination of stress characteristics which favour void formation. Stress relaxation behaviour has been investigated in Al(Cu) line structures with line widths of 3, 1 and 0.5 microns at 150, 200 and 250/spl deg/C. Results are consistent with a thermally activated dislocation glide mechanism and the kinetics is controlled by a combined effects of mass transport (diffusion) and shear stress (driving force). Results of these studies and their impact on stress voiding are discussed.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128355907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Growth and properties of FeSi/sub 2/ by MEVVA implantation and RTA MEVVA注入和RTA法制备FeSi/ sub2 /的生长和性能研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503348
Weidong Qian, Tong-he Zhang, Hong Liang
{"title":"Growth and properties of FeSi/sub 2/ by MEVVA implantation and RTA","authors":"Weidong Qian, Tong-he Zhang, Hong Liang","doi":"10.1109/ICSICT.1995.503348","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503348","url":null,"abstract":"Fe silicides are fabricated using MEVVA Fe ion implantation into P-Si with different ion flux /spl Phi/. The relation of sheet resistance R/sub /spl square// with annealing temperature Ta is obtained using a four-point probe. It is found that R/sub /spl square// decreases rapidly with increasing /spl Phi/ and Ta. XRD analysis shows that the semiconductor phase /spl beta/-FeSi/sub 2/ is formed for as-implanted samples and post annealed samples in the temperature range from 800/spl deg/C to 1000/spl deg/C. It is proved that there is a phase transition from /spl beta/-FeSi/sub 2/ (semiconducting) to /spl alpha/-FeSi/sub 2/ (metallic) after the samples are annealed at 1100/spl deg/C for 10 s.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129683178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An extractor for 3-D parasitic capacitance and resistance 三维寄生电容和电阻提取器
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500167
Yanhong Yuan, Zeyi Wang
{"title":"An extractor for 3-D parasitic capacitance and resistance","authors":"Yanhong Yuan, Zeyi Wang","doi":"10.1109/ICSICT.1995.500167","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500167","url":null,"abstract":"In the development of integrated circuits, parasitic parameters associated with interconnections affect the circuit speeds and functionality greatly in the case of sub-micron process. Many works have been done on the efficient calculation of these parameters. In this paper, a three-dimensional parasitic capacitance extractor is presented. The Boundary Element Method (BEM) is employed to deal with the Laplace's equation. The simulations and the comparisons showed that the experimental results are excellent agreement with the measured ones, and our extractor is effective in simulation of 3-D parasitic capacitances.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130293281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A ferroelectric thin film capacitor C-V model 一种铁电薄膜电容器C-V模型
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500087
Zheng Chen, T. Tang
{"title":"A ferroelectric thin film capacitor C-V model","authors":"Zheng Chen, T. Tang","doi":"10.1109/ICSICT.1995.500087","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500087","url":null,"abstract":"The local hysteresis loop is adopted to investigate the theory of the hysteresis loop under an unsaturated electric field for a ferroelectric thin film capacitor with MFM structure. The C-V characteristic under the condition of high frequency and small signal is modeled theoretically.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125703087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization and application of SOG in interlevel planarization 层间平面化中SOG的表征及应用
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500088
Jun Zhi, Tonggzeng Zhuang, Shuhong Zhang
{"title":"Characterization and application of SOG in interlevel planarization","authors":"Jun Zhi, Tonggzeng Zhuang, Shuhong Zhang","doi":"10.1109/ICSICT.1995.500088","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500088","url":null,"abstract":"In this article, SOG material and interlevel dielectric planarizing methods using SOG are introduced. Compared with other methods, SOG has the advantages of simplifying process, good planarizing effect and not affecting other devices on substrate. SOG films have SiO/sub 2/-like characteristics and inherent quality of planarizing the underlying topography and offer an attractive approach to dielectric planarization. There are three often used methods with SOG-Total Etchback, Partial Etchback and Non-Etchback. We have used SOG as the planarization material in our laboratory. By using ACCUGLASS P-114LS SOG, we have made some experiments with these planarizing methods.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129701130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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