Growth mechanism of /spl beta/-FeSi/sub 2/ by reactive deposition epitaxy

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.500073

Lianwei Wang, Chenglu Lin, Q. Shen, Rushan Ni, Xiangdong Chen, S. Zou, M. Ostling

引用次数: 0

Abstract

The growth mechanism of a semiconducting /spl beta/-FeSi/sub 2/ film has been investigated by in situ reflective high energy electron diffraction observation combined with ex situ AES depth profile and cross-section transmission electron microscopy. At the initial stage, a metastable cubic /spl gamma/-FeSi/sub 2/ phase has been detected on both Si(100) and (111) wafers. A multilayer structure Fe-rich silicide FeSi/sub 1+x//Si has been revealed. During the deposition, /spl beta/-FeSi/sub 2/ only directly formed on the top layer at high temperature.

查看原文本刊更多论文

反应沉积外延/spl β /-FeSi/sub 2/生长机理

采用原位反射高能电子衍射观察结合非原位AES深度剖面和透射电镜研究了半导体/spl β /-FeSi/sub - 2/薄膜的生长机理。在初始阶段，在Si(100)和Si(111)晶圆上都检测到亚稳立方/spl γ /-FeSi/亚2/相。发现了一种多层结构富铁硅化物FeSi/sub 1+x//Si。在沉积过程中，/spl β /-FeSi/sub 2/仅在高温下直接在顶层形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of 4th International Conference on Solid-State and IC Technology

自引率

0.00%

发文量