Characterization and application of SOG in interlevel planarization

Jun Zhi, Tonggzeng Zhuang, Shuhong Zhang
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Abstract

In this article, SOG material and interlevel dielectric planarizing methods using SOG are introduced. Compared with other methods, SOG has the advantages of simplifying process, good planarizing effect and not affecting other devices on substrate. SOG films have SiO/sub 2/-like characteristics and inherent quality of planarizing the underlying topography and offer an attractive approach to dielectric planarization. There are three often used methods with SOG-Total Etchback, Partial Etchback and Non-Etchback. We have used SOG as the planarization material in our laboratory. By using ACCUGLASS P-114LS SOG, we have made some experiments with these planarizing methods.
层间平面化中SOG的表征及应用
本文介绍了SOG材料和利用SOG进行层间介质平面化的方法。与其他方法相比,SOG具有工艺简化、平面化效果好、不影响衬底上其他器件的优点。SOG薄膜具有SiO/sub - 2/类SiO/sub - 2/的特性和使下伏形貌平面化的内在品质,为介质平面化提供了一种有吸引力的方法。sog常用的方法有三种:完全蚀刻、部分蚀刻和非蚀刻。我们实验室使用SOG作为平化材料。在ACCUGLASS P-114LS SOG上,对这些平面化方法进行了实验。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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