Lianwei Wang, Chenglu Lin, Q. Shen, Rushan Ni, Xiangdong Chen, S. Zou, M. Ostling
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Growth mechanism of /spl beta/-FeSi/sub 2/ by reactive deposition epitaxy
The growth mechanism of a semiconducting /spl beta/-FeSi/sub 2/ film has been investigated by in situ reflective high energy electron diffraction observation combined with ex situ AES depth profile and cross-section transmission electron microscopy. At the initial stage, a metastable cubic /spl gamma/-FeSi/sub 2/ phase has been detected on both Si(100) and (111) wafers. A multilayer structure Fe-rich silicide FeSi/sub 1+x//Si has been revealed. During the deposition, /spl beta/-FeSi/sub 2/ only directly formed on the top layer at high temperature.
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