{"title":"层间平面化中SOG的表征及应用","authors":"Jun Zhi, Tonggzeng Zhuang, Shuhong Zhang","doi":"10.1109/ICSICT.1995.500088","DOIUrl":null,"url":null,"abstract":"In this article, SOG material and interlevel dielectric planarizing methods using SOG are introduced. Compared with other methods, SOG has the advantages of simplifying process, good planarizing effect and not affecting other devices on substrate. SOG films have SiO/sub 2/-like characteristics and inherent quality of planarizing the underlying topography and offer an attractive approach to dielectric planarization. There are three often used methods with SOG-Total Etchback, Partial Etchback and Non-Etchback. We have used SOG as the planarization material in our laboratory. By using ACCUGLASS P-114LS SOG, we have made some experiments with these planarizing methods.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization and application of SOG in interlevel planarization\",\"authors\":\"Jun Zhi, Tonggzeng Zhuang, Shuhong Zhang\",\"doi\":\"10.1109/ICSICT.1995.500088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, SOG material and interlevel dielectric planarizing methods using SOG are introduced. Compared with other methods, SOG has the advantages of simplifying process, good planarizing effect and not affecting other devices on substrate. SOG films have SiO/sub 2/-like characteristics and inherent quality of planarizing the underlying topography and offer an attractive approach to dielectric planarization. There are three often used methods with SOG-Total Etchback, Partial Etchback and Non-Etchback. We have used SOG as the planarization material in our laboratory. By using ACCUGLASS P-114LS SOG, we have made some experiments with these planarizing methods.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.500088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.500088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization and application of SOG in interlevel planarization
In this article, SOG material and interlevel dielectric planarizing methods using SOG are introduced. Compared with other methods, SOG has the advantages of simplifying process, good planarizing effect and not affecting other devices on substrate. SOG films have SiO/sub 2/-like characteristics and inherent quality of planarizing the underlying topography and offer an attractive approach to dielectric planarization. There are three often used methods with SOG-Total Etchback, Partial Etchback and Non-Etchback. We have used SOG as the planarization material in our laboratory. By using ACCUGLASS P-114LS SOG, we have made some experiments with these planarizing methods.