0.2 /spl mu/m LDD NMOSFETs fabricated by conventional optical lithography

Abstract

To improve the performance and reliability of deep sub micron MOSFETs, we propose an innovative non-planar LDD structure which can be fabricated by conventional optical lithography and plasma etching without using e-beam lithography. The proposed structure overcomes the trade-off between short channel effects and hot carrier effects which are most important in deep sub-micron devices, and retains the high current driving ability.