{"title":"一种铁电薄膜电容器C-V模型","authors":"Zheng Chen, T. Tang","doi":"10.1109/ICSICT.1995.500087","DOIUrl":null,"url":null,"abstract":"The local hysteresis loop is adopted to investigate the theory of the hysteresis loop under an unsaturated electric field for a ferroelectric thin film capacitor with MFM structure. The C-V characteristic under the condition of high frequency and small signal is modeled theoretically.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A ferroelectric thin film capacitor C-V model\",\"authors\":\"Zheng Chen, T. Tang\",\"doi\":\"10.1109/ICSICT.1995.500087\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The local hysteresis loop is adopted to investigate the theory of the hysteresis loop under an unsaturated electric field for a ferroelectric thin film capacitor with MFM structure. The C-V characteristic under the condition of high frequency and small signal is modeled theoretically.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.500087\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.500087","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The local hysteresis loop is adopted to investigate the theory of the hysteresis loop under an unsaturated electric field for a ferroelectric thin film capacitor with MFM structure. The C-V characteristic under the condition of high frequency and small signal is modeled theoretically.
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