{"title":"氢化纳米晶硅中氢配合物的x射线衍射研究","authors":"F. Yun, Y. Wana, X. Liao","doi":"10.1109/ICSICT.1995.499271","DOIUrl":null,"url":null,"abstract":"This paper presents X-ray diffraction results on hydrogenated nanocrystalline silicon films showing a new diffraction feature at 2/spl theta/=33.6/spl deg/, which is supposed to be an identifying signature of the atomic relaxation of hydrogenated Si(111) surface of nano-crystallites.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"X-ray diffraction study of hydrogen complexes in hydrogenated nanocrystalline silicon\",\"authors\":\"F. Yun, Y. Wana, X. Liao\",\"doi\":\"10.1109/ICSICT.1995.499271\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents X-ray diffraction results on hydrogenated nanocrystalline silicon films showing a new diffraction feature at 2/spl theta/=33.6/spl deg/, which is supposed to be an identifying signature of the atomic relaxation of hydrogenated Si(111) surface of nano-crystallites.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.499271\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.499271","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
X-ray diffraction study of hydrogen complexes in hydrogenated nanocrystalline silicon
This paper presents X-ray diffraction results on hydrogenated nanocrystalline silicon films showing a new diffraction feature at 2/spl theta/=33.6/spl deg/, which is supposed to be an identifying signature of the atomic relaxation of hydrogenated Si(111) surface of nano-crystallites.
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