Growth and properties of FeSi/sub 2/ by MEVVA implantation and RTA

Abstract

Fe silicides are fabricated using MEVVA Fe ion implantation into P-Si with different ion flux /spl Phi/. The relation of sheet resistance R/sub /spl square// with annealing temperature Ta is obtained using a four-point probe. It is found that R/sub /spl square// decreases rapidly with increasing /spl Phi/ and Ta. XRD analysis shows that the semiconductor phase /spl beta/-FeSi/sub 2/ is formed for as-implanted samples and post annealed samples in the temperature range from 800/spl deg/C to 1000/spl deg/C. It is proved that there is a phase transition from /spl beta/-FeSi/sub 2/ (semiconducting) to /spl alpha/-FeSi/sub 2/ (metallic) after the samples are annealed at 1100/spl deg/C for 10 s.