{"title":"采用传统光刻技术制备的0.2 /spl μ m LDD nmosfet","authors":"Jinshu Zhang, T. Lo, P. Tsien","doi":"10.1109/ICSICT.1995.500075","DOIUrl":null,"url":null,"abstract":"To improve the performance and reliability of deep sub micron MOSFETs, we propose an innovative non-planar LDD structure which can be fabricated by conventional optical lithography and plasma etching without using e-beam lithography. The proposed structure overcomes the trade-off between short channel effects and hot carrier effects which are most important in deep sub-micron devices, and retains the high current driving ability.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"0.2 /spl mu/m LDD NMOSFETs fabricated by conventional optical lithography\",\"authors\":\"Jinshu Zhang, T. Lo, P. Tsien\",\"doi\":\"10.1109/ICSICT.1995.500075\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To improve the performance and reliability of deep sub micron MOSFETs, we propose an innovative non-planar LDD structure which can be fabricated by conventional optical lithography and plasma etching without using e-beam lithography. The proposed structure overcomes the trade-off between short channel effects and hot carrier effects which are most important in deep sub-micron devices, and retains the high current driving ability.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.500075\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.500075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
0.2 /spl mu/m LDD NMOSFETs fabricated by conventional optical lithography
To improve the performance and reliability of deep sub micron MOSFETs, we propose an innovative non-planar LDD structure which can be fabricated by conventional optical lithography and plasma etching without using e-beam lithography. The proposed structure overcomes the trade-off between short channel effects and hot carrier effects which are most important in deep sub-micron devices, and retains the high current driving ability.
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