GaAs/GaAlAs quantum well infrared detector with bias-tuned wavelength and large absorption band-width

Abstract

A new type of GaAs/GaAlAs quantum well infrared photodetectors with two different structures and features has been designed. For the first one, the detecting wavelength can be tuned by bias, and for the second one, the large absorption bandwidth can be obtained. They have better performances than that of the conventional GaAs/GaAlAs quantum well infrared photodetectors. They have a potential future. Simulation and preliminary experiments have been performed.