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Proceedings of 4th International Conference on Solid-State and IC Technology最新文献

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Analytical model of collector current density and base transit time 集电极电流密度与基极传输时间的解析模型
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503362
P. Ma, Lichun Zhang, Yangyuan Wang
{"title":"Analytical model of collector current density and base transit time","authors":"P. Ma, Lichun Zhang, Yangyuan Wang","doi":"10.1109/ICSICT.1995.503362","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503362","url":null,"abstract":"Based on an iteration method with initial low injected minority carrier profiles, analytical expressions of collector current density and base transit time are presented. Comparing the analytical results with the numeric, the following conclusion is obtained: under the condition of injected emitter-base junction voltage V/sub BE//spl les/1.0 V, the analytical expressions of the collector current density and the base transit time with three time iteration processions are valid.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134560483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MALU-an ALU with single period multiplication 一种单周期乘法的ALU
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503533
Yongming Li, Hongyi Chen, Zhengdong Yu, Tong Chu, Kun Bian
{"title":"MALU-an ALU with single period multiplication","authors":"Yongming Li, Hongyi Chen, Zhengdong Yu, Tong Chu, Kun Bian","doi":"10.1109/ICSICT.1995.503533","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503533","url":null,"abstract":"An ALU design which can perform Mbit/spl times/Nbit multiplication within single instruction period is presented in this paper. The architecture, operation control and logic for this ALU are given. Logical and spice (with 2 /spl mu/m CMOS technology) simulation results are also given. It can be used in MPUs and MCUs to enhance their computation capability.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133687625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of boron pocket implantation for deep sub-micron NMOSFET process 深亚微米NMOSFET工艺中硼口袋注入的优化
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500071
Chun Jiang, E. Nowak, L. Ding, Y. Loh
{"title":"Optimization of boron pocket implantation for deep sub-micron NMOSFET process","authors":"Chun Jiang, E. Nowak, L. Ding, Y. Loh","doi":"10.1109/ICSICT.1995.500071","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500071","url":null,"abstract":"The impact of boron pocket implant in NMOSFET was investigated. It is found that the higher boron dose in combination with a retrograde well and large angle tilted LDD implantation process, can improve the reverse short channel effect, drain drive current and hot carrier reliability. The higher boron pocket implant is also found to be beneficial to ESD robustness.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133864885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Investigation of Ti, Co and Fe silicides on SIMOX materials SIMOX材料上Ti、Co和Fe硅化物的研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500077
Chenglu Lin, Lianjun Wang, Shiyang Zhu, Ping Liu, P. Hemment, S. Zou
{"title":"Investigation of Ti, Co and Fe silicides on SIMOX materials","authors":"Chenglu Lin, Lianjun Wang, Shiyang Zhu, Ping Liu, P. Hemment, S. Zou","doi":"10.1109/ICSICT.1995.500077","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500077","url":null,"abstract":"The fabrication of Ti, Co and Fe silicides on SIMOX materials has been investigated. These multilayer structures have been synthesized by different methods respectively. The physical properties and microstructure have been investigated. The experimental results show that TiSi/sub 2/ with a low sheet resistance of 4.5/spl Omega///spl square/, can be formed on the thin film SIMOX. An epitaxial CoSi/sub 2/ film has been obtained on SIMOX by a solid phase reaction of Co/Ti with Si overlayer of SIMOX. Semiconducting /spl beta/-FeSi/sub 2/ film has been synthesized on SIMOX by solid phase epitaxy.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122544872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DC-40 GHz MMIC switches dc - 40ghz MMIC开关
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500175
Y. Ye, T. Yu, S. B. Wu
{"title":"DC-40 GHz MMIC switches","authors":"Y. Ye, T. Yu, S. B. Wu","doi":"10.1109/ICSICT.1995.500175","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500175","url":null,"abstract":"DC to 40 GHz MMIC high-isolation ultra-fast switches (SPST) have been demonstrated. The switch uses a combination of series and shunt FET's. From DC to 40 GHz the MMIC switch exhibits less than 3 dB insertion loss and greater than 40 dB isolation. The switching time is less than 1 ns, including the driver. From DC to 26.5 GHz better than 50 dB isolation have been achieved and maximum isolation of up to 80 dB.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124579114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical calculation of I-V characteristic curves of an ion implanted GaAs MESFET 离子注入GaAs MESFET I-V特性曲线的数值计算
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503333
T. Weng
{"title":"Numerical calculation of I-V characteristic curves of an ion implanted GaAs MESFET","authors":"T. Weng","doi":"10.1109/ICSICT.1995.503333","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503333","url":null,"abstract":"A numerical method for calculating the I-V characteristics of a GaAs MESFET with ion implanted layer is presented. This method is based on the finding of the channel conductance as a function of the voltage drop across the metal-semiconductor junction which in turn is related to the depletion depth of the active layer through the solution of Poisson's equation.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129072973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total dose /spl gamma/-ray irradiation characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers 在SIMOX和BESOI晶圆上制作的CMOS逆变器的总剂量/spl γ /射线辐照特性
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.500081
Shingyang Zhu, J. Li, Chenglu Lin, J. X. Gao, L. Yan
{"title":"Total dose /spl gamma/-ray irradiation characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers","authors":"Shingyang Zhu, J. Li, Chenglu Lin, J. X. Gao, L. Yan","doi":"10.1109/ICSICT.1995.500081","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.500081","url":null,"abstract":"The total dose response characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers were measured as a function of accumulative dose and bias conditions during irradiation. The stretch-out technique was used to separate the threshold-voltage shifts of PMOS and NMOS into shifts due to interface traps and trapped-oxide charge. The leakage currents of NMOS/SIMOX increased quickly after irradiation because of the parasitic back-channel MOS structure. While the BESOI devices suffered no significant back-channel effect due to thick top silicon layers.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128453860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ionizing radiation effects of mobility in fluorinated NMOSFETs 氟化nmosfet中迁移率的电离辐射效应
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499642
Guoqiang Zhang, Rongliang Yan, Wenyu Gao, Diyuan Ren, Yuanfu Zhao, Yuhong Hu
{"title":"Ionizing radiation effects of mobility in fluorinated NMOSFETs","authors":"Guoqiang Zhang, Rongliang Yan, Wenyu Gao, Diyuan Ren, Yuanfu Zhao, Yuhong Hu","doi":"10.1109/ICSICT.1995.499642","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499642","url":null,"abstract":"Co-60 radiation responses of carrier mobility in fluorinated NMOSFETs have been investigated. The experimental results show that the radiation induced mobility degradation in fluorinated oxides can be restrained in the F dose range of 1/spl times/10/sup 15/-1/spl times/10/sup 16/ F/cm/sup 2/, the better degradation improvement corresponds to higher fluorine implantation dose due to less interface trap buildup. In addition, the mobility degradation is related to the channel width.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129279379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A research on power complementary bipolar technology to prevent parasitic operation 防止寄生运行的功率互补双极技术研究
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.503557
J.H. Kim, C.J. Kim, H. Kang, Y. Jang, S. Lim
{"title":"A research on power complementary bipolar technology to prevent parasitic operation","authors":"J.H. Kim, C.J. Kim, H. Kang, Y. Jang, S. Lim","doi":"10.1109/ICSICT.1995.503557","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.503557","url":null,"abstract":"A 2 /spl mu/m design ruled, High-Densified, and Low-Power-Consuming Bipolar Integrated Circuit process has been developed. The breakdown voltage of the transistor is 15 V and it has a stable current driving capability at high current (about 1 A) due to the low saturation voltage between emitter and collector. NPN Tr. has been fabricated to prevent leakage current and has good Cut-Off frequency (fT=5 GHz) by using a polysilicon emitter. The characteristics of this process is a Double Epi Process to form a high concentrated N+BL in VPNP Tr. (that is the same as in NPN Tr.) which can protect the parasitic Tr. operation like Latch-Up Phenomenon (Ihold=26 mA, Pa-PNP Tr, hFE=4). And it also includes the IIL Device without an additional mask layer. This process is a low voltage, high current power complementary bipolar process that merges a variety of NPN, VPNP, LPNP, SPNP, IIL devices, and a diffusion resistor.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116040640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New mechanism of contact electromigration 接触电迁移新机制
Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI: 10.1109/ICSICT.1995.499264
Eungsoo Kim, Kyung-Won Cho, Hyung-Woo Jang, Soonkwon Lim
{"title":"New mechanism of contact electromigration","authors":"Eungsoo Kim, Kyung-Won Cho, Hyung-Woo Jang, Soonkwon Lim","doi":"10.1109/ICSICT.1995.499264","DOIUrl":"https://doi.org/10.1109/ICSICT.1995.499264","url":null,"abstract":"The reliability problems in a device have become more important as the chip size gets smaller. To improve the reliability, the main failure mechanism should be verified. However, the EM-induced damage at a contact or via hole has been usually ignored while the metal line failure has been strongly studied by many researchers. In this work, the electromigration (EM) mechanism at the submicron size of contact hole are presented with respect to type of dopants and to use of the barrier metal using AES, SEM, FIB micrographs, and EM measurement. One of the interesting results is void formation by Si atom migration to the metal line on Si substrate, instead of Al atom migration.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116698194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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