Investigation of Ti, Co and Fe silicides on SIMOX materials

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.500077

Chenglu Lin, Lianjun Wang, Shiyang Zhu, Ping Liu, P. Hemment, S. Zou

引用次数: 0

Abstract

The fabrication of Ti, Co and Fe silicides on SIMOX materials has been investigated. These multilayer structures have been synthesized by different methods respectively. The physical properties and microstructure have been investigated. The experimental results show that TiSi/sub 2/ with a low sheet resistance of 4.5/spl Omega///spl square/, can be formed on the thin film SIMOX. An epitaxial CoSi/sub 2/ film has been obtained on SIMOX by a solid phase reaction of Co/Ti with Si overlayer of SIMOX. Semiconducting /spl beta/-FeSi/sub 2/ film has been synthesized on SIMOX by solid phase epitaxy.

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SIMOX材料上Ti、Co和Fe硅化物的研究

研究了在SIMOX材料上制备Ti、Co和Fe硅化物的方法。分别用不同的方法合成了这些多层结构。对其物理性能和微观结构进行了研究。实验结果表明，在SIMOX薄膜上可以形成薄膜电阻为4.5/spl ω ///spl square/的TiSi/sub 2/。采用Co/Ti与SIMOX的Si包覆层固相反应，在SIMOX表面制备了外延CoSi/ sub2 /薄膜。采用固相外延法在SIMOX上合成了半导体/spl β /-FeSi/sub 2/薄膜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 4th International Conference on Solid-State and IC Technology

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