Shingyang Zhu, J. Li, Chenglu Lin, J. X. Gao, L. Yan
{"title":"在SIMOX和BESOI晶圆上制作的CMOS逆变器的总剂量/spl γ /射线辐照特性","authors":"Shingyang Zhu, J. Li, Chenglu Lin, J. X. Gao, L. Yan","doi":"10.1109/ICSICT.1995.500081","DOIUrl":null,"url":null,"abstract":"The total dose response characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers were measured as a function of accumulative dose and bias conditions during irradiation. The stretch-out technique was used to separate the threshold-voltage shifts of PMOS and NMOS into shifts due to interface traps and trapped-oxide charge. The leakage currents of NMOS/SIMOX increased quickly after irradiation because of the parasitic back-channel MOS structure. While the BESOI devices suffered no significant back-channel effect due to thick top silicon layers.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Total dose /spl gamma/-ray irradiation characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers\",\"authors\":\"Shingyang Zhu, J. Li, Chenglu Lin, J. X. Gao, L. Yan\",\"doi\":\"10.1109/ICSICT.1995.500081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The total dose response characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers were measured as a function of accumulative dose and bias conditions during irradiation. The stretch-out technique was used to separate the threshold-voltage shifts of PMOS and NMOS into shifts due to interface traps and trapped-oxide charge. The leakage currents of NMOS/SIMOX increased quickly after irradiation because of the parasitic back-channel MOS structure. While the BESOI devices suffered no significant back-channel effect due to thick top silicon layers.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.500081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.500081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Total dose /spl gamma/-ray irradiation characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers
The total dose response characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers were measured as a function of accumulative dose and bias conditions during irradiation. The stretch-out technique was used to separate the threshold-voltage shifts of PMOS and NMOS into shifts due to interface traps and trapped-oxide charge. The leakage currents of NMOS/SIMOX increased quickly after irradiation because of the parasitic back-channel MOS structure. While the BESOI devices suffered no significant back-channel effect due to thick top silicon layers.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
