Optimization of boron pocket implantation for deep sub-micron NMOSFET process

Abstract

The impact of boron pocket implant in NMOSFET was investigated. It is found that the higher boron dose in combination with a retrograde well and large angle tilted LDD implantation process, can improve the reverse short channel effect, drain drive current and hot carrier reliability. The higher boron pocket implant is also found to be beneficial to ESD robustness.