{"title":"集电极电流密度与基极传输时间的解析模型","authors":"P. Ma, Lichun Zhang, Yangyuan Wang","doi":"10.1109/ICSICT.1995.503362","DOIUrl":null,"url":null,"abstract":"Based on an iteration method with initial low injected minority carrier profiles, analytical expressions of collector current density and base transit time are presented. Comparing the analytical results with the numeric, the following conclusion is obtained: under the condition of injected emitter-base junction voltage V/sub BE//spl les/1.0 V, the analytical expressions of the collector current density and the base transit time with three time iteration processions are valid.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analytical model of collector current density and base transit time\",\"authors\":\"P. Ma, Lichun Zhang, Yangyuan Wang\",\"doi\":\"10.1109/ICSICT.1995.503362\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on an iteration method with initial low injected minority carrier profiles, analytical expressions of collector current density and base transit time are presented. Comparing the analytical results with the numeric, the following conclusion is obtained: under the condition of injected emitter-base junction voltage V/sub BE//spl les/1.0 V, the analytical expressions of the collector current density and the base transit time with three time iteration processions are valid.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503362\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analytical model of collector current density and base transit time
Based on an iteration method with initial low injected minority carrier profiles, analytical expressions of collector current density and base transit time are presented. Comparing the analytical results with the numeric, the following conclusion is obtained: under the condition of injected emitter-base junction voltage V/sub BE//spl les/1.0 V, the analytical expressions of the collector current density and the base transit time with three time iteration processions are valid.
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