深亚微米NMOSFET工艺中硼口袋注入的优化

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.500071

Chun Jiang, E. Nowak, L. Ding, Y. Loh

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引用次数: 3

摘要

研究了硼口袋植入对NMOSFET的影响。研究发现，高硼剂量与逆行井和大角度倾斜LDD注入工艺相结合，可以改善反向短通道效应、漏出驱动电流和热载流子可靠性。高硼口袋植入物也有利于ESD稳健性。

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Optimization of boron pocket implantation for deep sub-micron NMOSFET process

The impact of boron pocket implant in NMOSFET was investigated. It is found that the higher boron dose in combination with a retrograde well and large angle tilted LDD implantation process, can improve the reverse short channel effect, drain drive current and hot carrier reliability. The higher boron pocket implant is also found to be beneficial to ESD robustness.

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Proceedings of 4th International Conference on Solid-State and IC Technology

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