Total dose /spl gamma/-ray irradiation characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers

Abstract

The total dose response characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers were measured as a function of accumulative dose and bias conditions during irradiation. The stretch-out technique was used to separate the threshold-voltage shifts of PMOS and NMOS into shifts due to interface traps and trapped-oxide charge. The leakage currents of NMOS/SIMOX increased quickly after irradiation because of the parasitic back-channel MOS structure. While the BESOI devices suffered no significant back-channel effect due to thick top silicon layers.