Ionizing radiation effects of mobility in fluorinated NMOSFETs

Abstract

Co-60 radiation responses of carrier mobility in fluorinated NMOSFETs have been investigated. The experimental results show that the radiation induced mobility degradation in fluorinated oxides can be restrained in the F dose range of 1/spl times/10/sup 15/-1/spl times/10/sup 16/ F/cm/sup 2/, the better degradation improvement corresponds to higher fluorine implantation dose due to less interface trap buildup. In addition, the mobility degradation is related to the channel width.