{"title":"氟化nmosfet中迁移率的电离辐射效应","authors":"Guoqiang Zhang, Rongliang Yan, Wenyu Gao, Diyuan Ren, Yuanfu Zhao, Yuhong Hu","doi":"10.1109/ICSICT.1995.499642","DOIUrl":null,"url":null,"abstract":"Co-60 radiation responses of carrier mobility in fluorinated NMOSFETs have been investigated. The experimental results show that the radiation induced mobility degradation in fluorinated oxides can be restrained in the F dose range of 1/spl times/10/sup 15/-1/spl times/10/sup 16/ F/cm/sup 2/, the better degradation improvement corresponds to higher fluorine implantation dose due to less interface trap buildup. In addition, the mobility degradation is related to the channel width.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ionizing radiation effects of mobility in fluorinated NMOSFETs\",\"authors\":\"Guoqiang Zhang, Rongliang Yan, Wenyu Gao, Diyuan Ren, Yuanfu Zhao, Yuhong Hu\",\"doi\":\"10.1109/ICSICT.1995.499642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Co-60 radiation responses of carrier mobility in fluorinated NMOSFETs have been investigated. The experimental results show that the radiation induced mobility degradation in fluorinated oxides can be restrained in the F dose range of 1/spl times/10/sup 15/-1/spl times/10/sup 16/ F/cm/sup 2/, the better degradation improvement corresponds to higher fluorine implantation dose due to less interface trap buildup. In addition, the mobility degradation is related to the channel width.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.499642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.499642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ionizing radiation effects of mobility in fluorinated NMOSFETs
Co-60 radiation responses of carrier mobility in fluorinated NMOSFETs have been investigated. The experimental results show that the radiation induced mobility degradation in fluorinated oxides can be restrained in the F dose range of 1/spl times/10/sup 15/-1/spl times/10/sup 16/ F/cm/sup 2/, the better degradation improvement corresponds to higher fluorine implantation dose due to less interface trap buildup. In addition, the mobility degradation is related to the channel width.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
