Properties of metalorganic chemical vapor deposited tantalum nitride thin films

Abstract

Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis indicate that 600/spl deg/C as-deposited films exhibit polycrystalline structure with <200> preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections.