Study of the longitudinal micro-distribution in the principal parameter properties of LEC SI-GaAs

Abstract

The regularity of the longitudinal micro-distribution in parameters such as shallow acceptor carbon, deep donor EL2, resistivity and EPD was studied. The experimental results showed that for undoped LEC SI-GaAs crystal grown in an As rich [As/(As+Ga)=0.51] melt, C concentration and resistivity reduced from the seed-end to the tail-end. EL2 longitudinal distribution has three characteristic regions. EPD longitudinal distribution is a non-symmetrical "U" shape. The origin of these longitudinal distributions in SI-GaAs is discussed and a method to improve the homogeneity of SI-GaAs crystals is investigated.