{"title":"具有偏置调谐波长和大吸收带宽度的GaAs/GaAlAs量子阱红外探测器","authors":"C. Du, J. Deng, Qun Li, G. Shen","doi":"10.1109/ICSICT.1995.503544","DOIUrl":null,"url":null,"abstract":"A new type of GaAs/GaAlAs quantum well infrared photodetectors with two different structures and features has been designed. For the first one, the detecting wavelength can be tuned by bias, and for the second one, the large absorption bandwidth can be obtained. They have better performances than that of the conventional GaAs/GaAlAs quantum well infrared photodetectors. They have a potential future. Simulation and preliminary experiments have been performed.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"190 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"GaAs/GaAlAs quantum well infrared detector with bias-tuned wavelength and large absorption band-width\",\"authors\":\"C. Du, J. Deng, Qun Li, G. Shen\",\"doi\":\"10.1109/ICSICT.1995.503544\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new type of GaAs/GaAlAs quantum well infrared photodetectors with two different structures and features has been designed. For the first one, the detecting wavelength can be tuned by bias, and for the second one, the large absorption bandwidth can be obtained. They have better performances than that of the conventional GaAs/GaAlAs quantum well infrared photodetectors. They have a potential future. Simulation and preliminary experiments have been performed.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"190 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503544\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503544","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs/GaAlAs quantum well infrared detector with bias-tuned wavelength and large absorption band-width
A new type of GaAs/GaAlAs quantum well infrared photodetectors with two different structures and features has been designed. For the first one, the detecting wavelength can be tuned by bias, and for the second one, the large absorption bandwidth can be obtained. They have better performances than that of the conventional GaAs/GaAlAs quantum well infrared photodetectors. They have a potential future. Simulation and preliminary experiments have been performed.
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