Xunchun Li, Mengzhen Chen, Tianchun Ye, Yuling Wang, Baoyin Sun, Runmei Wang, Changqing Xie, Zhengya Cao, Z. Zhu
{"title":"金属侧壁图案与x射线面罩的支持","authors":"Xunchun Li, Mengzhen Chen, Tianchun Ye, Yuling Wang, Baoyin Sun, Runmei Wang, Changqing Xie, Zhengya Cao, Z. Zhu","doi":"10.1109/ICSICT.1995.503388","DOIUrl":null,"url":null,"abstract":"A new method for fabricating sub-quarter micron X-ray mask patterns with high aspect ratio for HEMT and MOSFET is proposed. The key point of the method is to make the metal side-wall pattern with a supporter transparent to X-rays. Using the X-ray mask pattern made in the new method, a 93 nm line width positive resist pattern and a 260 nm line width negative resist pattern have been obtained. It is expected that this method could be applied to nanometer X-ray lithography for generation of the patterns of HEMT and MOSFET devices in the near future.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Metal side-wall pattern with a supporter for X-ray mask\",\"authors\":\"Xunchun Li, Mengzhen Chen, Tianchun Ye, Yuling Wang, Baoyin Sun, Runmei Wang, Changqing Xie, Zhengya Cao, Z. Zhu\",\"doi\":\"10.1109/ICSICT.1995.503388\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new method for fabricating sub-quarter micron X-ray mask patterns with high aspect ratio for HEMT and MOSFET is proposed. The key point of the method is to make the metal side-wall pattern with a supporter transparent to X-rays. Using the X-ray mask pattern made in the new method, a 93 nm line width positive resist pattern and a 260 nm line width negative resist pattern have been obtained. It is expected that this method could be applied to nanometer X-ray lithography for generation of the patterns of HEMT and MOSFET devices in the near future.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503388\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503388","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Metal side-wall pattern with a supporter for X-ray mask
A new method for fabricating sub-quarter micron X-ray mask patterns with high aspect ratio for HEMT and MOSFET is proposed. The key point of the method is to make the metal side-wall pattern with a supporter transparent to X-rays. Using the X-ray mask pattern made in the new method, a 93 nm line width positive resist pattern and a 260 nm line width negative resist pattern have been obtained. It is expected that this method could be applied to nanometer X-ray lithography for generation of the patterns of HEMT and MOSFET devices in the near future.
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